STP16NF06
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STMicroelectronics STP16NF06

Manufacturer No:
STP16NF06
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 60V 16A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP16NF06 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their unique 'Single Feature Size™' strip-based process. This transistor is characterized by its extremely high packing density, resulting in low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility. It is available in TO-220 and TO-220FP packages, making it suitable for a variety of switching applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)60V
Gate-Source Voltage (VGS)±20V
Drain Current (ID) Continuous at TC = 25°C16A
Drain Current (ID) Continuous at TC = 100°C11A
Pulse Drain Current (IDM)64A
Total Dissipation at TC = 25°C45W
Thermal Resistance Junction-Case3.33°C/W
Thermal Resistance Junction-Ambient62.5°C/W
Maximum Junction Temperature175°C
Gate Threshold Voltage4V
Gate Charge (Qg)10nC
Drain-Source On Resistance (RDS(on))<0.1Ω
PackageTO-220, TO-220FP

Key Features

  • Exceptional dv/dt capability
  • Low gate charge at 100°C
  • Application-oriented characterization
  • High packing density for low on-resistance
  • Rugged avalanche characteristics
  • Less critical alignment steps for improved manufacturing reproducibility

Applications

The STP16NF06 is primarily used in switching applications due to its high current handling capability, low on-resistance, and robust avalanche characteristics. It is suitable for various power management and control circuits where high reliability and performance are required.

Q & A

  1. What is the maximum drain-source voltage of the STP16NF06?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the maximum continuous drain current at 25°C?
    The maximum continuous drain current at 25°C is 16 A.
  3. What is the thermal resistance junction-case for the TO-220 package?
    The thermal resistance junction-case is 3.33 °C/W.
  4. What is the gate threshold voltage of the STP16NF06?
    The gate threshold voltage is 4 V.
  5. What are the typical applications of the STP16NF06?
    The STP16NF06 is primarily used in switching applications.
  6. What is the maximum junction temperature of the STP16NF06?
    The maximum junction temperature is 175 °C.
  7. What is the total gate charge (Qg) of the STP16NF06?
    The total gate charge (Qg) is 10 nC.
  8. What are the package options available for the STP16NF06?
    The STP16NF06 is available in TO-220 and TO-220FP packages.
  9. What is the maximum power dissipation at 25°C?
    The maximum power dissipation at 25°C is 45 W.
  10. What are the key features of the STP16NF06?
    The key features include exceptional dv/dt capability, low gate charge at 100°C, and application-oriented characterization.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:315 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STP16NF06FP
STP16NF06FP
MOSFET N-CH 60V 11A TO220FP

Similar Products

Part Number STP16NF06 STP16NF06L
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Last Time Buy
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V, 5V
Rds On (Max) @ Id, Vgs 100mOhm @ 8A, 10V 90mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 10 nC @ 5 V
Vgs (Max) ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 315 pF @ 25 V 345 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 45W (Tc) 45W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

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