Overview
The STP16NF06FP is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their unique 'Single Feature Size™' strip-based process. This MOSFET is characterized by its high packing density, low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility. It is available in TO-220FP packages, making it suitable for high-current and high-switching speed applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 60 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 11 | A |
| Continuous Drain Current (ID) at TC = 100°C | 7.5 | A |
| Pulsed Drain Current (IDM) | 44 | A |
| Total Dissipation at TC = 25°C | 25 | W |
| Derating Factor | 0.17 | W/°C |
| Peak Diode Recovery Voltage Slope (dv/dt) | 20 | V/ns |
| Single Pulse Avalanche Energy (EAS) | 130 | mJ |
| Avalanche Current (IAR) | 16 | A |
| Maximum Junction Temperature (Tj) | 175 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 6 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
| Maximum Drain-Source On-State Resistance (RDS(on)) | <0.1 | Ω |
| Total Gate Charge (Qg) | 10 | nC |
Key Features
- Exceptional dv/dt capability, ensuring robust performance under high switching conditions.
- Low gate charge at 100°C, which enhances switching efficiency.
- High packing density resulting in low on-resistance and rugged avalanche characteristics.
- Less critical alignment steps, leading to improved manufacturing reproducibility.
- Available in ECOPACK® packages, which are lead-free and comply with environmental standards.
- Fast switching speed and minimal lot-to-lot variations for reliable operation.
Applications
The STP16NF06FP is designed for high-current and high-switching speed applications, including:
- Switching power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching circuits.
- Automotive and industrial power management systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP16NF06FP?
The maximum drain-source voltage (VDS) is 60 V. - What is the maximum continuous drain current (ID) at 25°C for the STP16NF06FP?
The maximum continuous drain current (ID) at 25°C is 11 A. - What is the thermal resistance junction-case (Rthj-case) for the TO-220FP package?
The thermal resistance junction-case (Rthj-case) is 6 °C/W. - What is the maximum junction temperature (Tj) for the STP16NF06FP?
The maximum junction temperature (Tj) is 175 °C. - What is the total gate charge (Qg) for the STP16NF06FP?
The total gate charge (Qg) is 10 nC. - What are the typical applications of the STP16NF06FP?
The STP16NF06FP is typically used in switching power supplies, DC-DC converters, motor control systems, high-frequency switching circuits, and automotive and industrial power management systems. - What is the maximum gate-source voltage (VGS) for the STP16NF06FP?
The maximum gate-source voltage (VGS) is ±20 V. - What is the peak diode recovery voltage slope (dv/dt) for the STP16NF06FP?
The peak diode recovery voltage slope (dv/dt) is 20 V/ns. - Does the STP16NF06FP come in lead-free packaging?
Yes, the STP16NF06FP is available in ECOPACK® packages, which are lead-free and comply with environmental standards. - What is the single pulse avalanche energy (EAS) for the STP16NF06FP?
The single pulse avalanche energy (EAS) is 130 mJ.
