STP16NF06L
  • Share:

STMicroelectronics STP16NF06L

Manufacturer No:
STP16NF06L
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 60V 16A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP16NF06L is a high-performance N-channel power MOSFET developed by STMicroelectronics. This device is part of STMicroelectronics' medium-voltage N-channel power MOSFET portfolio, designed for a wide range of industrial and automotive applications. The STP16NF06L utilizes STMicroelectronics' unique "Single Feature Size™" strip-based process, which results in extremely high packing density, low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 60 V
Gate-source voltage (VGS) ±20 V
Drain current (continuous) at TC = 25°C 16 A
Drain current (continuous) at TC = 100°C 11 A
Pulse drain current (IDM) 64 A
Total dissipation at TC = 25°C 45 W
Derating factor 0.3 W/°C
Peak diode recovery voltage slope (dv/dt) 20 V/ns
Static drain-source on resistance (RDS(on)) < 0.1 Ω
Gate threshold voltage (VGS(th)) 2 - 4 V
Package TO-220
Operating temperature range -55 to 175 °C
Maximum lead temperature for soldering 300 °C

Key Features

  • Exceptional dv/dt capability: The STP16NF06L exhibits high dv/dt capability, making it suitable for high-frequency switching applications.
  • Low gate charge at 100°C: This feature enhances the device's performance in high-temperature environments.
  • Application oriented characterization: The device is characterized to meet specific application requirements, ensuring optimal performance.
  • High packing density and low on-resistance: The unique "Single Feature Size™" strip-based process results in high packing density and low on-resistance.
  • Rugged avalanche characteristics: The device is designed with rugged avalanche characteristics, enhancing its reliability and durability.

Applications

The STP16NF06L is designed for a variety of applications, including:

  • Switching applications: Suitable for high-frequency switching due to its exceptional dv/dt capability and low gate charge.
  • Industrial applications: Used in various industrial power management and control systems.
  • Automotive applications: Ideal for automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP16NF06L?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the continuous drain current at 25°C for the STP16NF06L?

    The continuous drain current at 25°C is 16 A.

  3. What is the package type of the STP16NF06L?

    The package type is TO-220.

  4. What is the maximum operating junction temperature for the STP16NF06L?

    The maximum operating junction temperature is 175°C.

  5. What are the key features of the STP16NF06L?

    The key features include exceptional dv/dt capability, low gate charge at 100°C, application-oriented characterization, high packing density, and rugged avalanche characteristics.

  6. What are the typical applications of the STP16NF06L?

    The typical applications include switching applications, industrial power management, and automotive systems.

  7. What is the static drain-source on resistance (RDS(on)) of the STP16NF06L?

    The static drain-source on resistance (RDS(on)) is less than 0.1 Ω.

  8. What is the gate threshold voltage (VGS(th)) range for the STP16NF06L?

    The gate threshold voltage (VGS(th)) range is 2 to 4 V.

  9. What is the maximum lead temperature for soldering the STP16NF06L?

    The maximum lead temperature for soldering is 300°C.

  10. Is the STP16NF06L RoHS compliant?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V, 5V
Rds On (Max) @ Id, Vgs:90mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:345 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.40
563

Please send RFQ , we will respond immediately.

Similar Products

Part Number STP16NF06L STP16NF06
Manufacturer STMicroelectronics STMicroelectronics
Product Status Last Time Buy Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V, 5V 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 8A, 10V 100mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 5 V 13 nC @ 10 V
Vgs (Max) ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 345 pF @ 25 V 315 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 45W (Tc) 45W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

Related Product By Categories

BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK

Related Product By Brand

BTB16-800BWRG
BTB16-800BWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
STW18NM60ND
STW18NM60ND
STMicroelectronics
MOSFET N-CH 600V 13A TO247
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STP13NK60ZFP
STP13NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
STM32L496ZGT3
STM32L496ZGT3
STMicroelectronics
IC MCU 32BIT 1MB FLASH 144LQFP
STM32F215VET6
STM32F215VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
TDA2822M
TDA2822M
STMicroelectronics
IC AMP AB MONO/STER 2W 8MINI DIP
M24C04-WMN6
M24C04-WMN6
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
VNP35N07FI
VNP35N07FI
STMicroelectronics
IC PWR DRVR N-CH 1:1 ISOWATT220
LM217MDT-TR
LM217MDT-TR
STMicroelectronics
IC REG LINEAR POS ADJ 500MA DPAK