Overview
The STP160N75F3 is a high-performance N-channel enhancement mode Power MOSFET from STMicroelectronics, part of their STripFET™ family. This device is designed to offer ultra-low on-resistance, high packing density, and rugged avalanche characteristics, making it suitable for a variety of switching applications. The STP160N75F3 is available in the TO-220 package and is lead-free, complying with environmental requirements through ECOPACK® packaging.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 75 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Continuous drain current (ID) at TC = 25°C | 120 | A |
| Pulsed drain current (IDM) | 480 | A |
| Total dissipation at TC = 25°C | 330 | W |
| Derating factor | 2.2 | W/°C |
| Peak diode recovery voltage slope (dv/dt) | 20 | V/ns |
| Single pulse avalanche energy (EAS) | 600 | mJ |
| Operating junction temperature (Tj) | -55 to 175 | °C |
| Storage temperature (Tstg) | -55 to 175 | °C |
| Static drain-source on resistance (RDS(on)) | 4 mΩ | mΩ |
| Gate threshold voltage (VGS(th)) | 2 to 4 | V |
| Thermal resistance junction-case (Rthj-case) | 0.45 | °C/W |
| Thermal resistance junction-ambient (Rthj-amb) | 62.5 | °C/W |
Key Features
- Ultra-low on-resistance: The STP160N75F3 features a low RDS(on) of 4 mΩ, enhancing efficiency in switching applications.
- High packing density: The device exhibits high packing density, contributing to its low on-resistance and rugged avalanche characteristics.
- Rugged avalanche characteristics: The MOSFET is 100% avalanche tested, ensuring robust performance under various operating conditions.
- Low gate charge: The total gate charge is 85 nC, which helps in reducing switching losses.
- ECOPACK® packaging: The device is offered in lead-free packages, meeting environmental requirements.
Applications
The STP160N75F3 is suitable for a wide range of switching applications, including:
- Power supplies and DC-DC converters
- Motor control and drives
- Industrial automation
- Automotive systems (where specified as automotive grade)
- General-purpose switching applications requiring high efficiency and reliability
Q & A
- What is the maximum drain-source voltage of the STP160N75F3?
The maximum drain-source voltage (VDS) is 75 V.
- What is the continuous drain current rating of the STP160N75F3 at 25°C?
The continuous drain current (ID) at 25°C is 120 A.
- What is the typical on-resistance of the STP160N75F3?
The typical static drain-source on resistance (RDS(on)) is 4 mΩ.
- What is the gate threshold voltage range of the STP160N75F3?
The gate threshold voltage (VGS(th)) ranges from 2 to 4 V.
- What is the thermal resistance junction-case of the STP160N75F3 in the TO-220 package?
The thermal resistance junction-case (Rthj-case) is 0.45 °C/W.
- Is the STP160N75F3 available in lead-free packaging?
- What is the maximum operating junction temperature of the STP160N75F3?
The maximum operating junction temperature (Tj) is 175 °C.
- What is the single pulse avalanche energy rating of the STP160N75F3?
The single pulse avalanche energy (EAS) is 600 mJ.
- What are the typical applications for the STP160N75F3?
The device is suitable for power supplies, DC-DC converters, motor control, industrial automation, and general-purpose switching applications.
- Can the STP160N75F3 be used in automotive applications?
Yes, but only if specified as automotive grade; otherwise, use is at the user's own risk.
