STP150N10F7AG
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STMicroelectronics STP150N10F7AG

Manufacturer No:
STP150N10F7AG
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
N-CHANNEL 100 V STRIPFET F7 POWE
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STP150N10F7AG is an automotive-grade N-channel Power MOSFET produced by STMicroelectronics. It utilizes the advanced STripFET F7 technology, which features an enhanced trench gate structure. This design results in very low on-state resistance, making it highly efficient for various high-power applications. The MOSFET is packaged in a TO-220 package, which is widely used in the industry for its robustness and ease of mounting.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
RDS(on) (On-State Resistance)4.2 mΩ (typ.)
ID (Drain Current)110 A
VGS(th) (Threshold Voltage)2-4 V
PD (Power Dissipation)Dependent on package and cooling conditions
PackageTO-220

Key Features

  • Low on-state resistance (RDS(on)) of 4.2 mΩ (typ.) for high efficiency.
  • High drain current (ID) of 110 A, suitable for high-power applications.
  • Automotive-grade, ensuring reliability and durability in harsh environments.
  • STripFET F7 technology with enhanced trench gate structure for improved performance.
  • TO-220 package for robustness and ease of mounting.

Applications

  • Automotive systems: power steering, power windows, and other high-power automotive applications.
  • Industrial power supplies and motor control systems.
  • High-efficiency DC-DC converters.
  • Power management in electric vehicles and hybrid vehicles.

Q & A

  1. What is the maximum drain-source voltage of the STP150N10F7AG?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the typical on-state resistance of the STP150N10F7AG?
    The typical on-state resistance (RDS(on)) is 4.2 mΩ.
  3. What is the maximum drain current of the STP150N10F7AG?
    The maximum drain current (ID) is 110 A.
  4. In what package is the STP150N10F7AG available?
    The STP150N10F7AG is available in a TO-220 package.
  5. What technology does the STP150N10F7AG use?
    The STP150N10F7AG uses STMicroelectronics' STripFET F7 technology.
  6. Is the STP150N10F7AG suitable for automotive applications?
    Yes, the STP150N10F7AG is automotive-grade and suitable for various high-power automotive applications.
  7. What are some common applications of the STP150N10F7AG?
    Common applications include automotive systems, industrial power supplies, motor control systems, and high-efficiency DC-DC converters.
  8. What is the threshold voltage range of the STP150N10F7AG?
    The threshold voltage (VGS(th)) range is typically between 2-4 V.
  9. How does the STripFET F7 technology enhance the performance of the MOSFET?
    The STripFET F7 technology enhances performance by providing a very low on-state resistance and an improved trench gate structure.
  10. What is the significance of the TO-220 package for the STP150N10F7AG?
    The TO-220 package provides robustness and ease of mounting, making it suitable for high-power applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:127 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9000 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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