STP14NF10
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STMicroelectronics STP14NF10

Manufacturer No:
STP14NF10
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 100V 15A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STP14NF10 is a high-performance N-channel power MOSFET produced by STMicroelectronics. It is part of the STripFET II family, known for its high efficiency and reliability. This MOSFET is packaged in a TO-220 package and is designed to handle high voltage and current applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
RDS(on) (On-Resistance)0.115 Ω (at VGS = 10 V, ID = 7 A)
ID (Continuous Drain Current)15 A
PD (Power Dissipation)60 W
PackageTO-220
ConfigurationN-channel

Key Features

  • High voltage rating of 100 V, making it suitable for a wide range of applications.
  • Low on-resistance (RDS(on)) of 0.115 Ω, which minimizes power losses and enhances efficiency.
  • High continuous drain current of 15 A, supporting high-power applications.
  • 100% avalanche tested, ensuring robustness against transient conditions.
  • Zener-protected, providing additional protection against voltage spikes.

Applications

The STP14NF10 is ideal for various high-power applications, including:

  • Flyback converters: Due to its high voltage and current handling capabilities, it is well-suited for flyback converter designs.
  • LED lighting: Its efficiency and reliability make it a good choice for LED lighting systems.
  • Power supplies: It can be used in power supply units that require high efficiency and robustness.
  • Motor control: Suitable for motor control applications where high current and voltage are required.

Q & A

  1. What is the maximum drain-source voltage of the STP14NF10?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the on-resistance (RDS(on)) of the STP14NF10?
    The on-resistance is 0.115 Ω at VGS = 10 V, ID = 7 A.
  3. What is the continuous drain current rating of the STP14NF10?
    The continuous drain current (ID) is 15 A.
  4. What package type is the STP14NF10 available in?
    The STP14NF10 is available in a TO-220 package.
  5. Is the STP14NF10 suitable for flyback converters?
    Yes, it is suitable for flyback converters due to its high voltage and current handling capabilities.
  6. What additional protections does the STP14NF10 have?
    The STP14NF10 is 100% avalanche tested and Zener-protected.
  7. What are some common applications of the STP14NF10?
    Common applications include flyback converters, LED lighting, power supplies, and motor control.
  8. What is the power dissipation rating of the STP14NF10?
    The power dissipation (PD) is 60 W.
  9. Is the STP14NF10 RoHS compliant?
    Yes, the STP14NF10 is RoHS compliant.
  10. Where can I find detailed specifications for the STP14NF10?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website, Digi-Key, Mouser, and other electronic component distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP14NF10 STP14NF12
Manufacturer STMicroelectronics STMicroelectronics
Product Status Last Time Buy Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 120 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 7A, 10V 180mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V 21 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 25 V 460 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 60W (Tc) 60W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

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