STL90N3LLH6
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STMicroelectronics STL90N3LLH6

Manufacturer No:
STL90N3LLH6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 90A POWERFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL90N3LLH6 is an N-channel Power MOSFET developed by STMicroelectronics using the 6th generation of STripFET™ DeepGATE™ technology. This device features a new gate structure that enhances its performance and reliability. It is designed to operate at high current levels and is suitable for various power management applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 30 V
RDS(ON) (On-Resistance) 0.004 Ω
ID (Drain Current) 90 A
VGS (Gate-Source Voltage) 20 V
Package 8-PowerVDFN

Key Features

  • Utilizes ST's STripFET F8 technology with an enhanced trench gate structure.
  • Low on-resistance (RDS(ON)) of 0.004 Ω.
  • High drain current (ID) of 90 A.
  • Zener-protected and 100% avalanche tested.
  • New gate structure using the 6th generation of STripFET™ DeepGATE™ technology.

Applications

  • Flyback converters
  • LED lighting applications
  • Other high-current power management systems

Q & A

  1. What is the typical on-resistance of the STL90N3LLH6?

    The typical on-resistance (RDS(ON)) is 0.004 Ω.

  2. What is the maximum drain-source voltage (VDS) for the STL90N3LLH6?

    The maximum drain-source voltage (VDS) is 30 V.

  3. What is the maximum drain current (ID) for the STL90N3LLH6?

    The maximum drain current (ID) is 90 A.

  4. What technology is used in the STL90N3LLH6?

    The STL90N3LLH6 uses ST's STripFET F8 technology with an enhanced trench gate structure.

  5. Is the STL90N3LLH6 Zener-protected and avalanche tested?

    Yes, the STL90N3LLH6 is Zener-protected and 100% avalanche tested.

  6. What are some common applications for the STL90N3LLH6?

    Common applications include flyback converters and LED lighting.

  7. What is the package type of the STL90N3LLH6?

    The package type is 8-PowerVDFN.

  8. What is the gate-source voltage (VGS) for the STL90N3LLH6?

    The gate-source voltage (VGS) is 20 V.

  9. Who is the manufacturer of the STL90N3LLH6?

    The manufacturer is STMicroelectronics.

  10. Where can I find detailed specifications for the STL90N3LLH6?

    Detailed specifications can be found on the official STMicroelectronics website, Digi-Key, Mouser Electronics, and other authorized distributors).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1690 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL90N3LLH6 STL80N3LLH6
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 12A, 10V 5.2mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V 17 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1690 pF @ 25 V 1690 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 60W (Tc) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN

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