STL35N6F3
  • Share:

STMicroelectronics STL35N6F3

Manufacturer No:
STL35N6F3
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 35A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL35N6F3 is an N-channel enhancement mode Power MOSFET produced by STMicroelectronics. It is designed using STMicroelectronics' advanced STripFET™ III technology, which enhances performance and efficiency. This MOSFET is particularly suited for high-power applications due to its robust specifications and reliable operation.

Key Specifications

ParameterValue
FET TypeN-Channel
Drain-Source Voltage (Vds)60V
Continuous Drain Current (Id)35A
On-Resistance (Rds(on))0.018 Ohm
Operating Temperature (TJ)-55°C ~ 175°C
PackageTape & Reel (TR), POWERFLAT

Key Features

  • Advanced STripFET™ III technology for improved performance and efficiency.
  • Low on-resistance (Rds(on)) of 0.018 Ohm, reducing power losses.
  • High continuous drain current of 35A, suitable for high-power applications.
  • Wide operating temperature range from -55°C to 175°C.
  • POWERFLAT package for enhanced thermal performance and space efficiency.

Applications

The STL35N6F3 MOSFET is ideal for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems requiring high reliability and performance.
  • Industrial power management and control systems.

Q & A

  1. What is the FET type of the STL35N6F3? The STL35N6F3 is an N-channel enhancement mode Power MOSFET.
  2. What is the maximum drain-source voltage (Vds) of the STL35N6F3? The maximum drain-source voltage is 60V.
  3. What is the continuous drain current (Id) of the STL35N6F3? The continuous drain current is 35A.
  4. What is the on-resistance (Rds(on)) of the STL35N6F3? The on-resistance is 0.018 Ohm.
  5. What is the operating temperature range of the STL35N6F3? The operating temperature range is from -55°C to 175°C.
  6. What package types are available for the STL35N6F3? The STL35N6F3 is available in Tape & Reel (TR) and POWERFLAT packages.
  7. What technology is used in the STL35N6F3? The STL35N6F3 is produced using STMicroelectronics' STripFET™ III technology.
  8. What are some typical applications of the STL35N6F3? Typical applications include power supplies, motor control systems, automotive systems, and industrial power management.
  9. Why is the STL35N6F3 suitable for high-power applications? The STL35N6F3 is suitable due to its high continuous drain current, low on-resistance, and wide operating temperature range.
  10. Where can I find detailed specifications for the STL35N6F3? Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:22mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):5W (Ta), 80W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

-
397

Please send RFQ , we will respond immediately.

Similar Products

Part Number STL35N6F3 STL85N6F3
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 3A, 10V 5.7mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 60 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 3400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 5W (Ta), 80W (Tc) 80W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN

Related Product By Categories

FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK

Related Product By Brand

SM15T75AY
SM15T75AY
STMicroelectronics
TVS DIODE 64.1VWM 134VC SMC
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
STL6P3LLH6
STL6P3LLH6
STMicroelectronics
MOSFET P-CH 30V 6A POWERFLAT
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
SCT10N120
SCT10N120
STMicroelectronics
SICFET N-CH 1200V 12A HIP247
STM32H7B3IIT6Q
STM32H7B3IIT6Q
STMicroelectronics
IC MCU 32BIT 2MB FLASH 176LQFP
E-TDA7560A
E-TDA7560A
STMicroelectronics
IC AMP AB QUAD 80W 27FLEXIWATT
L9959S-TR-D
L9959S-TR-D
STMicroelectronics
IC H-BRIDGE HIGH SIDE 24PSSOP
VNQ6004SA-E
VNQ6004SA-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
L6599ATDTR
L6599ATDTR
STMicroelectronics
IC RESONANT CONVRTR CTRLR 16SOIC
PM8908TR
PM8908TR
STMicroelectronics
IC REG CONV DDR 1OUT 20QFN