STL190N4F7AG
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STMicroelectronics STL190N4F7AG

Manufacturer No:
STL190N4F7AG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 120A POWERFLAT
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The STL190N4F7AG is an automotive-grade N-channel power MOSFET produced by STMicroelectronics. It is part of the STripFET F7 family, which is known for its high performance, energy efficiency, and low noise emission. This MOSFET is designed to meet the stringent requirements of automotive applications, offering a combination of high current handling and low on-resistance.

Key Specifications

Parameter Value Unit
Transistor Polarity N Channel
Continuous Drain Current (Id) 120 A
Drain Source Voltage (Vds) 40 V
On Resistance (Rds(on)) 1.68 mOhm (typ.) mOhm
Package Type PowerFLAT 5x6
AEC-Q101 Qualification Yes

Key Features

  • High Avalanche Ruggedness: The STL190N4F7AG features high avalanche ruggedness, making it suitable for demanding applications.
  • Low On-Resistance: With a typical on-resistance of 1.68 mOhm, this MOSFET minimizes energy losses and enhances overall system efficiency.
  • Low EMI and Noise Immunity: The STripFET F7 technology ensures low electromagnetic interference (EMI) and high noise immunity, reducing the need for additional filtering components.
  • Soft Recovery Diode: The soft recovery characteristics of the body diode minimize shoot-through currents in bridge circuits, enhancing reliability.
  • Compact Footprint: The PowerFLAT 5x6 package with wettable flanks allows for high system power density and improved solder-joint reliability.
  • Automotive Qualification: Qualified to AEC-Q101 standards, ensuring reliability and performance in automotive environments.

Applications

  • High-Current Powertrain Systems: Suitable for high-current applications in powertrain systems.
  • Body and Chassis Systems: Used in various body and chassis systems requiring high current handling.
  • Safety Systems: Applicable in safety-critical systems where reliability and performance are paramount.
  • Motor Drives: Ideal for use in motor drives, such as Electric Power Steering (EPS), due to its switching characteristics.

Q & A

  1. What is the continuous drain current of the STL190N4F7AG MOSFET?

    The continuous drain current (Id) of the STL190N4F7AG is 120 A.

  2. What is the drain-source voltage (Vds) rating of the STL190N4F7AG?

    The drain-source voltage (Vds) rating is 40 V.

  3. What is the typical on-resistance (Rds(on)) of the STL190N4F7AG?

    The typical on-resistance (Rds(on)) is 1.68 mOhm.

  4. In what package is the STL190N4F7AG available?

    The STL190N4F7AG is available in the PowerFLAT 5x6 package.

  5. Is the STL190N4F7AG qualified to AEC-Q101 standards?

    Yes, the STL190N4F7AG is qualified to AEC-Q101 standards.

  6. What are the key features of the STripFET F7 technology used in the STL190N4F7AG?

    The STripFET F7 technology features low on-resistance, high avalanche ruggedness, low EMI, and soft recovery diode characteristics.

  7. What types of applications is the STL190N4F7AG suitable for?

    The STL190N4F7AG is suitable for high-current powertrain, body and chassis systems, safety systems, and motor drives such as EPS.

  8. How does the STL190N4F7AG enhance system reliability?

    The STL190N4F7AG enhances system reliability through its soft recovery diode characteristics, which minimize shoot-through currents in bridge circuits.

  9. What are the benefits of the PowerFLAT 5x6 package with wettable flanks?

    The PowerFLAT 5x6 package with wettable flanks allows for high system power density, improved solder-joint reliability, and 100% automatic optical inspection.

  10. How does the STL190N4F7AG reduce the need for additional filtering components?

    The STL190N4F7AG reduces the need for additional filtering components due to its low EMI and high noise immunity.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):127W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL190N4F7AG STL140N4F7AG
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 17.5A, 10V 2.5mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V 2300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 127W (Tc) 111W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN

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