Overview
The STL10N3LLH5 is an N-channel Power MOSFET developed by STMicroelectronics using their advanced STripFET™ V technology. This device is optimized for very low on-state resistance, contributing to a Figure of Merit (FOM) that is among the best in its class. It is designed for high-performance switching applications, particularly in automotive and other demanding environments.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 30 | V |
| Gate-Source Voltage (VGS) | ±22 | V |
| Continuous Drain Current (ID) at TC = 25°C | 9 | A |
| Continuous Drain Current (ID) at TC = 100°C | 6 | A |
| Pulsed Drain Current (IDM) | 36 | A |
| Total Dissipation at TC = 25°C | 50 | W |
| Thermal Resistance Junction-Case (Rthj-case) | 2.5 | °C/W |
| Thermal Resistance Junction-PCB (Rthj-pcb) | 42.8 (transient), 62.5 (steady state) | °C/W |
| On-Resistance (RDS(on)) at VGS = 10V, ID = 4.5A | 0.015 Ω (typ), 0.019 Ω (max) | Ω |
| Gate Threshold Voltage (VGS(th)) | 1 - 2.5 | V |
| Total Gate Charge (Qg) | 5 nC (typ) | nC |
Key Features
- Extremely low on-resistance (RDS(on))
- Very low switching gate charge (Qg)
- High avalanche ruggedness
- Low gate drive power losses
- Optimized for high-performance switching applications
- Available in PowerFLAT™ 3.3x3.3 package
Applications
The STL10N3LLH5 is suitable for various switching applications, particularly in the automotive sector. Its high performance and robust design make it ideal for use in power management systems, motor control, and other high-power electronic devices.
Q & A
- What is the maximum drain-source voltage (VDS) of the STL10N3LLH5?
The maximum drain-source voltage (VDS) is 30 V. - What is the continuous drain current (ID) at 25°C?
The continuous drain current (ID) at 25°C is 9 A. - What is the typical on-resistance (RDS(on)) of the STL10N3LLH5?
The typical on-resistance (RDS(on)) is 0.015 Ω at VGS = 10V and ID = 4.5A. - What is the thermal resistance junction-case (Rthj-case) of the STL10N3LLH5?
The thermal resistance junction-case (Rthj-case) is 2.5 °C/W. - What are the key features of the STL10N3LLH5?
The key features include extremely low on-resistance, very low switching gate charge, high avalanche ruggedness, and low gate drive power losses. - In what package is the STL10N3LLH5 available?
The STL10N3LLH5 is available in the PowerFLAT™ 3.3x3.3 package. - What are the typical applications of the STL10N3LLH5?
The STL10N3LLH5 is typically used in switching applications, especially in the automotive sector. - What is the maximum gate-source voltage (VGS) of the STL10N3LLH5?
The maximum gate-source voltage (VGS) is ±22 V. - What is the total gate charge (Qg) of the STL10N3LLH5?
The total gate charge (Qg) is typically 5 nC. - What is the operating junction temperature range of the STL10N3LLH5?
The operating junction temperature range is -55 to 150 °C.
