STL10N3LLH5
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STMicroelectronics STL10N3LLH5

Manufacturer No:
STL10N3LLH5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 9A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STL10N3LLH5 is an N-channel Power MOSFET developed by STMicroelectronics using their advanced STripFET™ V technology. This device is optimized for very low on-state resistance, contributing to a Figure of Merit (FOM) that is among the best in its class. It is designed for high-performance switching applications, particularly in automotive and other demanding environments.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)30V
Gate-Source Voltage (VGS)±22V
Continuous Drain Current (ID) at TC = 25°C9A
Continuous Drain Current (ID) at TC = 100°C6A
Pulsed Drain Current (IDM)36A
Total Dissipation at TC = 25°C50W
Thermal Resistance Junction-Case (Rthj-case)2.5°C/W
Thermal Resistance Junction-PCB (Rthj-pcb)42.8 (transient), 62.5 (steady state)°C/W
On-Resistance (RDS(on)) at VGS = 10V, ID = 4.5A0.015 Ω (typ), 0.019 Ω (max)Ω
Gate Threshold Voltage (VGS(th))1 - 2.5V
Total Gate Charge (Qg)5 nC (typ)nC

Key Features

  • Extremely low on-resistance (RDS(on))
  • Very low switching gate charge (Qg)
  • High avalanche ruggedness
  • Low gate drive power losses
  • Optimized for high-performance switching applications
  • Available in PowerFLAT™ 3.3x3.3 package

Applications

The STL10N3LLH5 is suitable for various switching applications, particularly in the automotive sector. Its high performance and robust design make it ideal for use in power management systems, motor control, and other high-power electronic devices.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STL10N3LLH5?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the continuous drain current (ID) at 25°C?
    The continuous drain current (ID) at 25°C is 9 A.
  3. What is the typical on-resistance (RDS(on)) of the STL10N3LLH5?
    The typical on-resistance (RDS(on)) is 0.015 Ω at VGS = 10V and ID = 4.5A.
  4. What is the thermal resistance junction-case (Rthj-case) of the STL10N3LLH5?
    The thermal resistance junction-case (Rthj-case) is 2.5 °C/W.
  5. What are the key features of the STL10N3LLH5?
    The key features include extremely low on-resistance, very low switching gate charge, high avalanche ruggedness, and low gate drive power losses.
  6. In what package is the STL10N3LLH5 available?
    The STL10N3LLH5 is available in the PowerFLAT™ 3.3x3.3 package.
  7. What are the typical applications of the STL10N3LLH5?
    The STL10N3LLH5 is typically used in switching applications, especially in the automotive sector.
  8. What is the maximum gate-source voltage (VGS) of the STL10N3LLH5?
    The maximum gate-source voltage (VGS) is ±22 V.
  9. What is the total gate charge (Qg) of the STL10N3LLH5?
    The total gate charge (Qg) is typically 5 nC.
  10. What is the operating junction temperature range of the STL10N3LLH5?
    The operating junction temperature range is -55 to 150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:19mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±22V
Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (3.3x3.3)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL10N3LLH5 STL12N3LLH5 STL150N3LLH5 STL15N3LLH5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 12A (Tc) 195A (Tc) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 4.5A, 10V 9mOhm @ 6A, 10V 1.75mOhm @ 17.5A, 10V 5.4mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V 12 nC @ 4.5 V 40 nC @ 4.5 V 12 nC @ 4.5 V
Vgs (Max) ±22V ±22V ±22V ±22V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 25 V 1500 pF @ 25 V 5800 pF @ 25 V 1500 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 2W (Ta), 50W (Tc) 2W (Ta), 50W (Tc) 114W (Tc) 2W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (3.3x3.3) PowerFlat™ (3.3x3.3) PowerFlat™ (5x6) PowerFlat™ (3.3x3.3)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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