STL150N3LLH5
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STMicroelectronics STL150N3LLH5

Manufacturer No:
STL150N3LLH5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 195A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STL150N3LLH5 is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the STripFET™ family and features the PowerFLAT™ (6x5) package, which is designed to optimize thermal performance and reduce footprint. The MOSFET is characterized by its low on-resistance and high current handling capabilities, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
RDS(on) (On-Resistance)0.0014 Ω
ID (Continuous Drain Current)35 A
PD (Power Dissipation)114 W (at TC)
PackagePowerFLAT™ (6x5)
Avalanche Tested100% tested

Key Features

  • Low on-resistance (RDS(on)) of 0.0014 Ω, minimizing power losses.
  • High continuous drain current (ID) of 35 A, suitable for high-power applications.
  • 100% avalanche tested, ensuring robustness against transient events.
  • Zener-protected, providing additional protection against voltage spikes.
  • PowerFLAT™ (6x5) package for enhanced thermal performance and reduced footprint.

Applications

The STL150N3LLH5 is ideal for various power management applications, including:

  • Flyback converters: Due to its high current handling and low on-resistance, it is well-suited for flyback converter designs.
  • LED lighting: The MOSFET's characteristics make it a good choice for LED lighting systems that require high efficiency and reliability.
  • Power supplies: It can be used in switching power supplies where high power density and efficiency are required.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STL150N3LLH5?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the on-resistance (RDS(on)) of the STL150N3LLH5?
    The on-resistance (RDS(on)) is 0.0014 Ω.
  3. What is the continuous drain current (ID) of the STL150N3LLH5?
    The continuous drain current (ID) is 35 A.
  4. What package type does the STL150N3LLH5 use?
    The STL150N3LLH5 uses the PowerFLAT™ (6x5) package.
  5. Is the STL150N3LLH5 avalanche tested?
    Yes, the STL150N3LLH5 is 100% avalanche tested.
  6. What are some common applications for the STL150N3LLH5?
    Common applications include flyback converters, LED lighting, and switching power supplies.
  7. What is the power dissipation (PD) of the STL150N3LLH5?
    The power dissipation (PD) is 114 W at TC.
  8. Does the STL150N3LLH5 have Zener protection?
    Yes, the STL150N3LLH5 is Zener-protected.
  9. Where can I find the datasheet for the STL150N3LLH5?
    The datasheet can be found on the STMicroelectronics official website or through distributors like Digi-Key and Mouser.
  10. What are the benefits of using the PowerFLAT™ package?
    The PowerFLAT™ package enhances thermal performance and reduces the footprint of the device.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:195A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.75mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 4.5 V
Vgs (Max):±22V
Input Capacitance (Ciss) (Max) @ Vds:5800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):114W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL150N3LLH5 STL150N3LLH6 STL15N3LLH5 STL10N3LLH5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc) 150A (Tc) 15A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.75mOhm @ 17.5A, 10V 2.4mOhm @ 16.5A, 10V 5.4mOhm @ 7.5A, 10V 19mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 1V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 4.5 V 40 nC @ 4.5 V 12 nC @ 4.5 V 6 nC @ 4.5 V
Vgs (Max) ±22V ±20V ±22V ±22V
Input Capacitance (Ciss) (Max) @ Vds 5800 pF @ 25 V 4040 pF @ 25 V 1500 pF @ 25 V 900 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 114W (Tc) 80W (Tc) 2W (Ta), 50W (Tc) 2W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (3.3x3.3) PowerFlat™ (3.3x3.3)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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