Overview
The STL100N10F7 is an N-channel Power MOSFET developed by STMicroelectronics using the 7th generation of STripFET™ DeepGATE™ technology. This device features a new gate structure that enhances its performance and efficiency. It is packaged in a PowerFLAT™ 5x6 surface mount package, making it suitable for a variety of high-power applications.
Key Specifications
Parameter | Value |
---|---|
Voltage Rating (Vds) | 100 V |
On-Resistance (Rds(on)) | 0.0062 Ω (typ.) |
Continuous Drain Current (Id) | 19 A |
Pulse Drain Current (Id) | 80 A (Tc) |
Power Dissipation (Pd) | 5 W (Ta), 100 W (Tc) |
Package | PowerFLAT™ 5x6 |
Key Features
- 7th generation STripFET™ DeepGATE™ technology for improved performance and efficiency.
- Low on-resistance (Rds(on)) of 0.0062 Ω (typ.) for reduced power losses.
- High continuous drain current of 19 A and pulse drain current of 80 A (Tc).
- Surface mount PowerFLAT™ 5x6 package for compact and efficient design.
- Enhanced gate structure for better switching characteristics.
Applications
- High-power switching applications such as DC-DC converters, power supplies, and motor drives.
- Automotive systems, including electric vehicles and hybrid vehicles.
- Industrial power systems, such as power factor correction and high-frequency inverters.
- Consumer electronics requiring high efficiency and reliability.
Q & A
- What is the voltage rating of the STL100N10F7 MOSFET?
The voltage rating of the STL100N10F7 MOSFET is 100 V. - What is the typical on-resistance of the STL100N10F7?
The typical on-resistance (Rds(on)) is 0.0062 Ω. - What is the continuous drain current of the STL100N10F7?
The continuous drain current (Id) is 19 A. - What is the pulse drain current of the STL100N10F7?
The pulse drain current (Id) is 80 A (Tc). - What package type is used for the STL100N10F7?
The STL100N10F7 is packaged in a PowerFLAT™ 5x6 surface mount package. - What technology is used in the STL100N10F7?
The STL100N10F7 uses the 7th generation of STripFET™ DeepGATE™ technology. - What are some typical applications for the STL100N10F7?
Typical applications include high-power switching, automotive systems, industrial power systems, and consumer electronics. - What is the power dissipation of the STL100N10F7?
The power dissipation is 5 W (Ta) and 100 W (Tc). - Where can I find detailed specifications for the STL100N10F7?
Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key and Mouser. - Is the STL100N10F7 suitable for high-frequency applications?
Yes, the STL100N10F7 is suitable for high-frequency applications due to its enhanced gate structure and low on-resistance.