STL100N10F7
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STMicroelectronics STL100N10F7

Manufacturer No:
STL100N10F7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 80A POWERFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL100N10F7 is an N-channel Power MOSFET developed by STMicroelectronics using the 7th generation of STripFET™ DeepGATE™ technology. This device features a new gate structure that enhances its performance and efficiency. It is packaged in a PowerFLAT™ 5x6 surface mount package, making it suitable for a variety of high-power applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)100 V
On-Resistance (Rds(on))0.0062 Ω (typ.)
Continuous Drain Current (Id)19 A
Pulse Drain Current (Id)80 A (Tc)
Power Dissipation (Pd)5 W (Ta), 100 W (Tc)
PackagePowerFLAT™ 5x6

Key Features

  • 7th generation STripFET™ DeepGATE™ technology for improved performance and efficiency.
  • Low on-resistance (Rds(on)) of 0.0062 Ω (typ.) for reduced power losses.
  • High continuous drain current of 19 A and pulse drain current of 80 A (Tc).
  • Surface mount PowerFLAT™ 5x6 package for compact and efficient design.
  • Enhanced gate structure for better switching characteristics.

Applications

  • High-power switching applications such as DC-DC converters, power supplies, and motor drives.
  • Automotive systems, including electric vehicles and hybrid vehicles.
  • Industrial power systems, such as power factor correction and high-frequency inverters.
  • Consumer electronics requiring high efficiency and reliability.

Q & A

  1. What is the voltage rating of the STL100N10F7 MOSFET?
    The voltage rating of the STL100N10F7 MOSFET is 100 V.
  2. What is the typical on-resistance of the STL100N10F7?
    The typical on-resistance (Rds(on)) is 0.0062 Ω.
  3. What is the continuous drain current of the STL100N10F7?
    The continuous drain current (Id) is 19 A.
  4. What is the pulse drain current of the STL100N10F7?
    The pulse drain current (Id) is 80 A (Tc).
  5. What package type is used for the STL100N10F7?
    The STL100N10F7 is packaged in a PowerFLAT™ 5x6 surface mount package.
  6. What technology is used in the STL100N10F7?
    The STL100N10F7 uses the 7th generation of STripFET™ DeepGATE™ technology.
  7. What are some typical applications for the STL100N10F7?
    Typical applications include high-power switching, automotive systems, industrial power systems, and consumer electronics.
  8. What is the power dissipation of the STL100N10F7?
    The power dissipation is 5 W (Ta) and 100 W (Tc).
  9. Where can I find detailed specifications for the STL100N10F7?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key and Mouser.
  10. Is the STL100N10F7 suitable for high-frequency applications?
    Yes, the STL100N10F7 is suitable for high-frequency applications due to its enhanced gate structure and low on-resistance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.3mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5680 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):5W (Ta), 100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL100N10F7 STL110N10F7 STI100N10F7
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 107A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V -
Rds On (Max) @ Id, Vgs 7.3mOhm @ 19A, 10V 6mOhm @ 10A, 10V -
Vgs(th) (Max) @ Id 4V @ 250µA 4.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 72 nC @ 10 V -
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 5680 pF @ 50 V 5117 pF @ 50 V -
FET Feature - - -
Power Dissipation (Max) 5W (Ta), 100W (Tc) 136W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount Surface Mount Through Hole
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6) I2PAK (TO-262)
Package / Case 8-PowerVDFN 8-PowerVDFN TO-262-3 Long Leads, I²Pak, TO-262AA

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