STH6N95K5-2
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STMicroelectronics STH6N95K5-2

Manufacturer No:
STH6N95K5-2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 950V 6A H2PAK-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STH6N95K5-2 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This technology is based on a proprietary vertical structure, enhancing the device's performance and efficiency. The MOSFET is packaged in a H2PAK-2 surface mount package, making it suitable for a variety of high-power applications.

Key Specifications

ParameterValue
TypeN-channel
Drain-Source Voltage (Vds)950 V
Drain Current (Id)6 A
On-Resistance (Rds(on))1 Ω (typical)
Gate Threshold Voltage (Vgs(th))3 V @ Id
Input Capacitance (Ciss)450 pF @ 100 V
Gate Charge (Qg)13 nC @ 10 V
PackageH2PAK-2

Key Features

  • High voltage rating of 950 V, making it suitable for high-power applications.
  • Low on-resistance of 1 Ω (typical), reducing power losses.
  • MDmesh™ K5 technology for enhanced performance and efficiency.
  • Surface mount H2PAK-2 package for easy integration into designs.
  • High current capability of 6 A.

Applications

The STH6N95K5-2 is designed for use in various high-power applications, including:

  • Power supplies and converters.
  • Motor control and drives.
  • Industrial and automotive systems requiring high voltage and current handling.
  • Switch-mode power supplies.

Q & A

  1. What is the drain-source voltage rating of the STH6N95K5-2?
    The drain-source voltage rating is 950 V.
  2. What is the typical on-resistance of the STH6N95K5-2?
    The typical on-resistance is 1 Ω.
  3. What technology is used in the STH6N95K5-2?
    The STH6N95K5-2 uses MDmesh™ K5 technology.
  4. What is the package type of the STH6N95K5-2?
    The package type is H2PAK-2.
  5. What is the maximum drain current of the STH6N95K5-2?
    The maximum drain current is 6 A.
  6. What is the gate threshold voltage of the STH6N95K5-2?
    The gate threshold voltage is 3 V @ Id.
  7. What is the input capacitance of the STH6N95K5-2?
    The input capacitance is 450 pF @ 100 V.
  8. What is the gate charge of the STH6N95K5-2?
    The gate charge is 13 nC @ 10 V.
  9. In what types of applications is the STH6N95K5-2 typically used?
    The STH6N95K5-2 is typically used in power supplies, motor control, industrial and automotive systems, and switch-mode power supplies.
  10. Where can I find detailed specifications for the STH6N95K5-2?
    Detailed specifications can be found on the STMicroelectronics official website, Digi-Key, and other semiconductor distributor websites.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.25Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2Pak-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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