Overview
The STFW6N120K3 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced SuperMESH3™ technology. This device is designed for demanding applications requiring low on-resistance, superior dynamic performance, and high avalanche capability. Available in TO-3PF, TO-220, and TO-247 packages, it offers flexibility for various design needs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Breakdown Voltage (VBRDSS) | 1200 | V |
| Static Drain-Source On-Resistance (RDS(on)) | < 2.4 Ω (typ. 1.95 Ω) | Ω |
| Continuous Drain Current (ID) at TC = 25 °C | 6 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 3.8 | A |
| Pulsed Drain Current (IDM) | 20 | A |
| Power Dissipation (PTOT) at TC = 25 °C | 63 W (TO-3PF), 150 W (TO-220, TO-247) | W |
| Gate-Source Voltage (VGS) | ± 30 | V |
| Thermal Resistance Junction-Case (Rthj-case) | 1.98 (TO-3PF), 0.83 (TO-220), 0.83 (TO-247) | °C/W |
| Operating Junction Temperature (TJ) | -55 to 150 | °C |
Key Features
- 100% avalanche tested
- Extremely large avalanche performance
- Gate charge minimized
- Very low intrinsic capacitances
- Zener-protected to enhance ESD capability and absorb voltage transients
Applications
The STFW6N120K3 is suitable for various switching applications due to its low on-resistance, superior dynamic performance, and high avalanche capability. These characteristics make it ideal for demanding applications in power electronics.
Q & A
- What is the drain-source breakdown voltage of the STFW6N120K3?
The drain-source breakdown voltage (VBRDSS) is 1200 V.
- What are the typical and maximum values of the static drain-source on-resistance (RDS(on))?
The typical value is 1.95 Ω, and the maximum value is less than 2.4 Ω.
- What is the continuous drain current (ID) at TC = 25 °C and TC = 100 °C?
The continuous drain current is 6 A at TC = 25 °C and 3.8 A at TC = 100 °C.
- What is the pulsed drain current (IDM)?
The pulsed drain current is 20 A.
- What are the power dissipation values for different packages?
The power dissipation is 63 W for the TO-3PF package and 150 W for the TO-220 and TO-247 packages.
- What is the gate-source voltage (VGS) range?
The gate-source voltage range is ± 30 V.
- What are the thermal resistance values for junction-case and junction-ambient?
The thermal resistance junction-case is 1.98 °C/W for TO-3PF, 0.83 °C/W for TO-220, and 0.83 °C/W for TO-247. The thermal resistance junction-ambient is 50 °C/W for TO-3PF and TO-247, and 62.5 °C/W for TO-220.
- What is the operating junction temperature range?
The operating junction temperature range is -55 to 150 °C.
- What are the key features of the STFW6N120K3?
The key features include 100% avalanche testing, extremely large avalanche performance, minimized gate charge, very low intrinsic capacitances, and Zener protection.
- In what types of applications is the STFW6N120K3 commonly used?
The STFW6N120K3 is commonly used in switching applications due to its superior dynamic performance and high avalanche capability.
