STF5N105K5
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STMicroelectronics STF5N105K5

Manufacturer No:
STF5N105K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1050V 3A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STF5N105K5 is an N-channel power MOSFET designed by STMicroelectronics using their advanced MDmesh™ K5 technology. This device is known for its high voltage and current handling capabilities, making it suitable for a variety of power management applications. The MOSFET features Zener protection and is built to withstand high voltage and current stresses, ensuring robust performance in demanding environments.

Key Specifications

ParameterValue
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1050 V
Continuous Drain Current (Id) @ 25°C3 A
Power Dissipation (Pd) @ Tc25 W
Package TypeThrough Hole TO-220 Full Pack

Key Features

  • Avalanche-rugged MDmesh™ K5 technology for high voltage and current handling.
  • Zener protection for enhanced reliability.
  • High junction temperature rating.
  • Low Rds(on) for efficient switching performance.
  • Robust design to withstand high voltage and current stresses.

Applications

The STF5N105K5 is suitable for various power management and switching applications, including but not limited to:

  • Switch Mode Power Supplies (SMPS).
  • Motor control and drives.
  • Power conversion systems.
  • High voltage and high current industrial applications.

Q & A

  1. What is the drain to source voltage rating of the STF5N105K5?
    The drain to source voltage rating is 1050 V.
  2. What is the continuous drain current of the STF5N105K5 at 25°C?
    The continuous drain current is 3 A.
  3. What technology is used in the STF5N105K5?
    The STF5N105K5 uses MOSFET (Metal Oxide) technology.
  4. What is the package type of the STF5N105K5?
    The package type is Through Hole TO-220 Full Pack.
  5. What are some key applications of the STF5N105K5?
    Key applications include SMPS, motor control, power conversion systems, and high voltage industrial applications.
  6. Does the STF5N105K5 have any special protection features?
    Yes, it features Zener protection for enhanced reliability.
  7. What is the power dissipation of the STF5N105K5 at Tc?
    The power dissipation is 25 W.
  8. Why is the MDmesh™ K5 technology significant in the STF5N105K5?
    The MDmesh™ K5 technology provides high voltage and current handling capabilities and enhances the device's ruggedness against avalanche stresses.
  9. Is the STF5N105K5 suitable for high temperature environments?
    Yes, it has a high junction temperature rating, making it suitable for high temperature environments.
  10. Where can I find detailed specifications and datasheets for the STF5N105K5?
    Detailed specifications and datasheets can be found on the official STMicroelectronics website, as well as on distributor websites like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1050 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:12.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:210 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220 Full Pack
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF5N105K5 STF7N105K5
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1050 V 1050 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 1.5A, 10V 2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 210 pF @ 100 V 380 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 Full Pack TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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