STF20NM65N
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STMicroelectronics STF20NM65N

Manufacturer No:
STF20NM65N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 15A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF20NM65N is a high-performance Power MOSFET produced by STMicroelectronics. This component is designed with a revolutionary vertical structure and the company's strip layout, resulting in one of the world's lowest on-resistance and gate charge values. It is optimized for high-efficiency and compact Switch-Mode Power Supply (SMPS) designs, offering excellent switching performance and a high junction temperature rating of 200°C.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)650 V
VGS (Gate-Source Voltage)±20 V
ID (Continuous Drain Current)20 A
RDS(on) (On-Resistance)19 mΩ (typical at VGS = 10 V)
TJ (Junction Temperature)-55°C to 200°C
PD (Power Dissipation)Dependent on package and thermal conditions

Key Features

  • Low on-resistance (RDS(on)) and gate charge, enhancing switching efficiency and reducing power losses.
  • High junction temperature rating of 200°C, allowing for reliable operation in demanding environments.
  • Excellent switching performance, making it suitable for high-frequency applications.
  • Low gate input resistance, facilitating easier gate drive and control.

Applications

The STF20NM65N is ideal for various high-power applications, including:

  • Switch-Mode Power Supplies (SMPS): Due to its high efficiency and low on-resistance, it is well-suited for DC-DC converters, power adapters, and other SMPS designs.
  • Motor Drives: Its high current handling and low losses make it suitable for motor control and drive systems.
  • Power Factor Correction (PFC): The component's excellent switching characteristics and high temperature rating make it a good choice for PFC circuits.
  • Industrial Power Supplies: It is used in high-power industrial power supplies where efficiency and reliability are critical.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF20NM65N?
    The maximum drain-source voltage (VDS) is 650 V.
  2. What is the typical on-resistance (RDS(on)) of the STF20NM65N?
    The typical on-resistance (RDS(on)) is 19 mΩ at VGS = 10 V.
  3. What is the maximum junction temperature (TJ) of the STF20NM65N?
    The maximum junction temperature (TJ) is 200°C.
  4. What are the typical applications of the STF20NM65N?
    The STF20NM65N is typically used in Switch-Mode Power Supplies (SMPS), motor drives, power factor correction (PFC) circuits, and industrial power supplies.
  5. What is the continuous drain current (ID) rating of the STF20NM65N?
    The continuous drain current (ID) rating is 20 A.
  6. Why is the STF20NM65N considered high-performance?
    The STF20NM65N is considered high-performance due to its low on-resistance, low gate charge, and excellent switching performance.
  7. What is the significance of the low gate input resistance in the STF20NM65N?
    The low gate input resistance facilitates easier gate drive and control, enhancing overall system efficiency.
  8. How does the STF20NM65N contribute to compact SMPS designs?
    The STF20NM65N contributes to compact SMPS designs through its high efficiency and low on-resistance, which reduce the need for large heat sinks and other cooling measures.
  9. What are the benefits of the high junction temperature rating of the STF20NM65N?
    The high junction temperature rating of 200°C allows for reliable operation in demanding and high-temperature environments.
  10. Can the STF20NM65N be used in high-frequency applications?
    Yes, the STF20NM65N is suitable for high-frequency applications due to its excellent switching performance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:270mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1280 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STP20NM65N
STP20NM65N
MOSFET N-CH 650V 15A TO220

Similar Products

Part Number STF20NM65N STF24NM65N STF10NM65N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc) 19A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 7.5A, 10V 190mOhm @ 9.5A, 10V 480mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V 70 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1280 pF @ 50 V 2500 pF @ 50 V 850 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 30W (Tc) 40W (Tc) 25W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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