STF10N65K3
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STMicroelectronics STF10N65K3

Manufacturer No:
STF10N65K3
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 10A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF10N65K3 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. It is part of the SuperMESH3™ technology family, which combines an optimized vertical structure with advanced features to meet the demands of various high-power applications. This MOSFET is known for its extremely low on-resistance, superior dynamic performance, and high avalanche capability, making it suitable for applications requiring high reliability and efficiency.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 650 V
RDS(on) (On-Resistance) 0.75 Ω (typ.)
ID (Drain Current) 10 A
Package TO-220FP
Operating Temperature Range -55°C to 150°C
RoHS Compliance Ecopack2

Key Features

  • 100% avalanche tested
  • Extremely low on-resistance (RDS(on))
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Improved diode reverse recovery characteristics
  • Zener-protected

Applications

The STF10N65K3 is ideal for various high-power applications, including:

  • Flyback converters
  • LED lighting systems
  • Industrial and automotive power conversion systems
  • Switch-mode power supplies (SMPS)
  • Solar microinverters and data center power systems

Q & A

  1. What is the typical on-resistance of the STF10N65K3?

    The typical on-resistance (RDS(on)) of the STF10N65K3 is 0.75 Ω.

  2. What is the maximum drain current of the STF10N65K3?

    The maximum drain current (ID) of the STF10N65K3 is 10 A.

  3. What package type is the STF10N65K3 available in?

    The STF10N65K3 is available in the TO-220FP package.

  4. Is the STF10N65K3 RoHS compliant?

    Yes, the STF10N65K3 is RoHS compliant with an Ecopack2 grade.[

  5. What are some key applications of the STF10N65K3?

    The STF10N65K3 is suitable for flyback converters, LED lighting, industrial and automotive power conversion, SMPS, and solar microinverters.[

  6. Does the STF10N65K3 have any special protection features?

    Yes, the STF10N65K3 is Zener-protected and 100% avalanche tested.[

  7. What is the operating temperature range of the STF10N65K3?

    The operating temperature range of the STF10N65K3 is from -55°C to 150°C.[

  8. Where can I find EDA symbols, footprints, and 3D models for the STF10N65K3?

    You can download EDA symbols, footprints, and 3D models for the STF10N65K3 from the STMicroelectronics website.[

  9. What is the significance of SuperMESH3™ technology in the STF10N65K3?

    The SuperMESH3™ technology in the STF10N65K3 enhances its performance by providing extremely low on-resistance, superior dynamic performance, and high avalanche capability.[

  10. Can I purchase the STF10N65K3 from distributors?

    Yes, the STF10N65K3 is available for purchase from various distributors, including those listed on the STMicroelectronics website.[

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 3.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1180 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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STB10N65K3
MOSFET N-CH 650V 10A D2PAK
STP10N65K3
STP10N65K3
MOSFET N-CH 650V 10A TO220

Similar Products

Part Number STF10N65K3 STF11N65K3 STF10N62K3
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 620 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 11A (Tc) 8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 3.6A, 10V 850mOhm @ 3.6A, 10V 750mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V 42 nC @ 10 V 42 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1180 pF @ 25 V 1180 pF @ 50 V 1250 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 35W (Tc) 35W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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