STF10N62K3
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STMicroelectronics STF10N62K3

Manufacturer No:
STF10N62K3
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 620V 8.4A TO220FP
Delivery:
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Product Introduction

Overview

The STF10N62K3 is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the SuperMESH3 family, known for its advanced technology that enhances switching performance and reliability. The STF10N62K3 is designed to operate at high voltages and currents, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Maximum Drain-Source Voltage (Vds)620 V
Maximum Drain Current (Id)8.4 A
Maximum Gate-Source Voltage (Vgs)30 V
Maximum Gate-Threshold Voltage (Vgs(th))4.5 V
Maximum Drain-Source On-State Resistance (Rds(on))0.68 Ohm (typ.), 0.75 Ohm (max.)
Maximum Power Dissipation (Pd)30 W
Maximum Junction Temperature (Tj)150 °C
Total Gate Charge (Qg)42 nC
Rise Time (tr)15 nS
Output Capacitance (Coss)138 pF
PackageTO-220FP, I2PAKFP, IPAK, TO-220

Key Features

  • 100% avalanche tested for enhanced reliability
  • Extremely high dv/dt capability to handle rapid voltage changes
  • Gate charge minimized for improved switching efficiency
  • Very low intrinsic capacitances to reduce switching losses
  • Improved diode reverse recovery characteristics for better performance in high-frequency applications

Applications

The STF10N62K3 is versatile and can be used in a variety of applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Switching power amplifiers
  • High-frequency switching applications
  • Industrial and automotive power management systems

Q & A

  1. What is the maximum drain-source voltage of the STF10N62K3?
    The maximum drain-source voltage (Vds) is 620 V.
  2. What is the maximum drain current of the STF10N62K3?
    The maximum drain current (Id) is 8.4 A.
  3. What is the typical on-state resistance of the STF10N62K3?
    The typical on-state resistance (Rds(on)) is 0.68 Ohm.
  4. What are the available packages for the STF10N62K3?
    The STF10N62K3 is available in TO-220FP, I2PAKFP, IPAK, and TO-220 packages.
  5. What is the maximum gate-source voltage of the STF10N62K3?
    The maximum gate-source voltage (Vgs) is 30 V.
  6. What is the maximum junction temperature of the STF10N62K3?
    The maximum junction temperature (Tj) is 150 °C.
  7. Is the STF10N62K3 100% avalanche tested?
    Yes, the STF10N62K3 is 100% avalanche tested.
  8. What is the total gate charge of the STF10N62K3?
    The total gate charge (Qg) is 42 nC.
  9. What is the rise time of the STF10N62K3?
    The rise time (tr) is 15 nS.
  10. What are some common applications for the STF10N62K3?
    The STF10N62K3 is commonly used in power supplies, motor control systems, switching power amplifiers, and high-frequency switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):620 V
Current - Continuous Drain (Id) @ 25°C:8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1250 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STFI10N62K3
STFI10N62K3
MOSFET N CH 620V 8.4A I2PAKFP
STI10N62K3
STI10N62K3
MOSFET N-CH 620V 8.4A I2PAK
STP10N62K3
STP10N62K3
MOSFET N-CH 620V 8.4A TO220AB

Similar Products

Part Number STF10N62K3 STF17N62K3 STF10N65K3
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 620 V 620 V 650 V
Current - Continuous Drain (Id) @ 25°C 8.4A (Tc) 15.5A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 4A, 10V 340mOhm @ 7.5A, 10V 1Ohm @ 3.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V 105 nC @ 10 V 42 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1250 pF @ 50 V 3100 pF @ 50 V 1180 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 30W (Tc) 40W (Tc) 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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