Overview
The STF10N62K3 is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the SuperMESH3 family, known for its advanced technology that enhances switching performance and reliability. The STF10N62K3 is designed to operate at high voltages and currents, making it suitable for a variety of power management and switching applications.
Key Specifications
Parameter | Value |
---|---|
Maximum Drain-Source Voltage (Vds) | 620 V |
Maximum Drain Current (Id) | 8.4 A |
Maximum Gate-Source Voltage (Vgs) | 30 V |
Maximum Gate-Threshold Voltage (Vgs(th)) | 4.5 V |
Maximum Drain-Source On-State Resistance (Rds(on)) | 0.68 Ohm (typ.), 0.75 Ohm (max.) |
Maximum Power Dissipation (Pd) | 30 W |
Maximum Junction Temperature (Tj) | 150 °C |
Total Gate Charge (Qg) | 42 nC |
Rise Time (tr) | 15 nS |
Output Capacitance (Coss) | 138 pF |
Package | TO-220FP, I2PAKFP, IPAK, TO-220 |
Key Features
- 100% avalanche tested for enhanced reliability
- Extremely high dv/dt capability to handle rapid voltage changes
- Gate charge minimized for improved switching efficiency
- Very low intrinsic capacitances to reduce switching losses
- Improved diode reverse recovery characteristics for better performance in high-frequency applications
Applications
The STF10N62K3 is versatile and can be used in a variety of applications, including but not limited to:
- Power supplies and DC-DC converters
- Motor control and drive systems
- Switching power amplifiers
- High-frequency switching applications
- Industrial and automotive power management systems
Q & A
- What is the maximum drain-source voltage of the STF10N62K3?
The maximum drain-source voltage (Vds) is 620 V. - What is the maximum drain current of the STF10N62K3?
The maximum drain current (Id) is 8.4 A. - What is the typical on-state resistance of the STF10N62K3?
The typical on-state resistance (Rds(on)) is 0.68 Ohm. - What are the available packages for the STF10N62K3?
The STF10N62K3 is available in TO-220FP, I2PAKFP, IPAK, and TO-220 packages. - What is the maximum gate-source voltage of the STF10N62K3?
The maximum gate-source voltage (Vgs) is 30 V. - What is the maximum junction temperature of the STF10N62K3?
The maximum junction temperature (Tj) is 150 °C. - Is the STF10N62K3 100% avalanche tested?
Yes, the STF10N62K3 is 100% avalanche tested. - What is the total gate charge of the STF10N62K3?
The total gate charge (Qg) is 42 nC. - What is the rise time of the STF10N62K3?
The rise time (tr) is 15 nS. - What are some common applications for the STF10N62K3?
The STF10N62K3 is commonly used in power supplies, motor control systems, switching power amplifiers, and high-frequency switching applications.