Overview
The STD40NF10 is a high-performance N-channel power MOSFET developed by STMicroelectronics using their unique STripFET™ process. This process is designed to minimize input capacitance and gate charge, making the device highly suitable for advanced high-efficiency isolated DC-DC converters, particularly in telecom and computer applications, as well as in scenarios requiring low gate charge driving. The STD40NF10 is packaged in a DPAK (TO-252) surface mount package, which is compact and efficient for high-power applications. The device is part of STMicroelectronics' medium-voltage N-channel power MOSFET portfolio, catering to a broad range of industrial and automotive needs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | A |
| Maximum Drain Source Voltage | 100 V | V |
| Maximum Drain Source Resistance | 28 mΩ | mΩ |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4 V | V |
| Minimum Gate Threshold Voltage | 2 V | V |
| Maximum Gate Source Voltage | ±20 V | V |
| Typical Gate Charge @ Vgs | 46.5 nC @ 10 V | nC |
| Maximum Power Dissipation | 125 W | W |
| Maximum Operating Temperature | +175 °C | °C |
| Minimum Operating Temperature | -55 °C | °C |
| Length | 6.6 mm | mm |
| Width | 6.2 mm | mm |
| Height | 2.4 mm | mm |
| Transistor Material | Silicon (Si) |
Key Features
- Exceptional dv/dt Capability: The STD40NF10 has a high peak diode recovery voltage slope, making it suitable for high-frequency switching applications.
- 100% Avalanche Tested: Ensures reliability and robustness under extreme conditions.
- Low Gate Charge: Minimized input capacitance and gate charge due to the STripFET™ process, reducing driving requirements.
- High Continuous Drain Current: Supports up to 50 A continuous drain current, suitable for high-power applications.
- High Efficiency: Ideal for advanced high-efficiency isolated DC-DC converters.
- Compact Packaging: DPAK (TO-252) surface mount package for efficient use of space).
Applications
- Advanced High-Efficiency Isolated DC-DC Converters: Suitable for telecom and computer applications where high efficiency and low gate charge are critical).
- Industrial and Automotive Applications: Part of STMicroelectronics' medium-voltage N-channel power MOSFET portfolio, catering to a broad range of industrial and automotive needs).
- Switching Applications: Ideal for resistive and inductive load switching due to its exceptional dv/dt capability and low gate charge).
Q & A
- What is the maximum continuous drain current of the STD40NF10?
The maximum continuous drain current is 50 A at TC = 25 °C and 35 A at TC = 100 °C).
- What is the maximum drain-source voltage of the STD40NF10?
The maximum drain-source voltage is 100 V).
- What package type is the STD40NF10 available in?
The STD40NF10 is available in a DPAK (TO-252) surface mount package).
- What is the typical gate charge of the STD40NF10?
The typical gate charge is 46.5 nC at Vgs = 10 V).
- What are the operating temperature ranges for the STD40NF10?
The operating temperature range is from -55 °C to +175 °C).
- Is the STD40NF10 RoHS compliant?
Yes, the STD40NF10 is RoHS compliant with an Ecopack2 grade).
- What is the maximum power dissipation of the STD40NF10?
The maximum power dissipation is 125 W).
- What are the key applications of the STD40NF10?
The key applications include advanced high-efficiency isolated DC-DC converters, industrial, and automotive applications).
- What is the STripFET™ process used in the STD40NF10?
The STripFET™ process is designed to minimize input capacitance and gate charge, enhancing the device's performance in high-frequency switching applications).
- Is the STD40NF10 100% avalanche tested?
Yes, the STD40NF10 is 100% avalanche tested, ensuring its reliability under extreme conditions).
