STD30N6LF6AG
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STMicroelectronics STD30N6LF6AG

Manufacturer No:
STD30N6LF6AG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 24A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD30N6LF6AG is an N-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ F6 technology. This device features a new trench gate structure, enhancing its performance and efficiency. It is designed to operate in high-power applications, offering robust and reliable operation.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 60 V
ID (Drain Current) 24 A
RDS(on) (On-State Resistance) 25 mΩ @ 10V, 12A
VGS(th) (Threshold Voltage) 2.5 V
Package DPAK -
Power Dissipation 40 W W

Key Features

  • Advanced STripFET™ F6 Technology: Enhances performance with a new trench gate structure.
  • High Drain Current: Supports up to 24 A, making it suitable for high-power applications.
  • Low On-State Resistance: 25 mΩ @ 10V, 12A, reducing power losses and improving efficiency.
  • High Voltage Rating: 60 V drain-source voltage, ensuring robust operation in various environments.
  • Compact DPAK Package: Offers a balance between thermal performance and space efficiency.

Applications

  • Automotive Systems: Suitable for automotive applications due to its robust and reliable operation.
  • Power Supplies: Used in high-power DC-DC converters and power supplies.
  • Motor Control: Ideal for motor drive applications requiring high current and low on-state resistance.
  • Industrial Automation: Used in various industrial automation and control systems.

Q & A

  1. What is the maximum drain-source voltage of the STD30N6LF6AG?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the maximum drain current of the STD30N6LF6AG?

    The maximum drain current (ID) is 24 A.

  3. What is the on-state resistance of the STD30N6LF6AG?

    The on-state resistance (RDS(on)) is 25 mΩ @ 10V, 12A.

  4. What package type is the STD30N6LF6AG available in?

    The STD30N6LF6AG is available in a DPAK package.

  5. What is the power dissipation capability of the STD30N6LF6AG?

    The power dissipation capability is 40 W.

  6. What technology is used in the STD30N6LF6AG?

    The STD30N6LF6AG uses the advanced STripFET™ F6 technology.

  7. Is the STD30N6LF6AG suitable for automotive applications?
  8. What are some common applications of the STD30N6LF6AG?
  9. What is the threshold voltage of the STD30N6LF6AG?

    The threshold voltage (VGS(th)) is 2.5 V.

  10. Is the STD30N6LF6AG RoHS compliant?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:25mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1320 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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