STB60NF06LT4
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STMicroelectronics STB60NF06LT4

Manufacturer No:
STB60NF06LT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 60A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB60NF06LT4 is an automotive-grade N-channel power MOSFET produced by STMicroelectronics. This device is part of the STripFET II series, which is designed to minimize input capacitance and gate charge, making it highly suitable for high-efficiency applications. The STB60NF06LT4 is packaged in a D2PAK package and is characterized by its exceptional dv/dt capability, 100% avalanche testing, and a wide operating temperature range up to 175°C.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 60 V
Drain-Gate Voltage (VDGR) 60 V
Gate-Source Voltage (VGS) ±15 V
Continuous Drain Current (ID) at TC = 25°C 60 A
Continuous Drain Current (ID) at TC = 100°C 42 A
Pulsed Drain Current (IDM) 240 A
Total Dissipation at TC = 25°C 110 W
Derating Factor 0.73 W/°C
Static Drain-Source On Resistance (RDS(on)) at VGS = 10V, ID = 30A 0.012 Ω
Gate Threshold Voltage (VGS(th)) 1 V
Thermal Resistance Junction-Case (Rthj-case) 1.36 °C/W
Maximum Junction Temperature (Tj) 175 °C

Key Features

  • Exceptional dv/dt capability: Ensures robust performance in high-frequency switching applications.
  • 100% avalanche tested: Provides reliability and durability under extreme conditions.
  • Low threshold drive: Minimizes input capacitance and gate charge, making it suitable for low gate charge drive requirements.
  • Wide operating temperature range: Operates up to 175°C, making it suitable for a variety of applications.
  • High efficiency: Ideal for use in advanced high-efficiency isolated DC-DC converters.
  • ECOPACK® packages: Lead-free second level interconnect, compliant with JEDEC Standard JESD97.

Applications

  • Switching applications: Suitable for primary switch roles in high-efficiency isolated DC-DC converters.
  • Telecom and Computer applications: Ideal for use in advanced high-efficiency power supplies.
  • Automotive systems: Designed to meet the stringent requirements of automotive environments.
  • Other applications with low gate charge drive requirements: General-purpose switching applications where low gate charge is beneficial.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STB60NF06LT4?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the continuous drain current (ID) at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 60 A.

  3. What is the typical static drain-source on resistance (RDS(on)) at VGS = 10V, ID = 30A?

    The typical static drain-source on resistance (RDS(on)) at VGS = 10V, ID = 30A is 0.012 Ω.

  4. What is the maximum junction temperature (Tj) of the STB60NF06LT4?

    The maximum junction temperature (Tj) is 175°C.

  5. What are the key features of the STB60NF06LT4?

    The key features include exceptional dv/dt capability, 100% avalanche testing, low threshold drive, wide operating temperature range, and high efficiency.

  6. In what type of package is the STB60NF06LT4 available?

    The STB60NF06LT4 is available in a D2PAK package.

  7. What are some common applications for the STB60NF06LT4?

    Common applications include switching applications, telecom and computer power supplies, automotive systems, and other applications with low gate charge drive requirements.

  8. Is the STB60NF06LT4 suitable for high-frequency switching applications?

    Yes, it is suitable due to its exceptional dv/dt capability.

  9. Does the STB60NF06LT4 meet environmental standards?

    Yes, it is available in ECOPACK® packages, which are lead-free and compliant with JEDEC Standard JESD97.

  10. What is the thermal resistance junction-case (Rthj-case) of the STB60NF06LT4?

    The thermal resistance junction-case (Rthj-case) is 1.36 °C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 4.5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-65°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
STB60NF06LT4
STB60NF06LT4
MOSFET N-CH 60V 60A D2PAK

Similar Products

Part Number STB60NF06LT4 STB60NF06T4
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 30A, 10V 16mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 4.5 V 66 nC @ 10 V
Vgs (Max) ±15V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V 1810 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 110W (Tc) 110W (Tc)
Operating Temperature -65°C ~ 175°C (TJ) -65°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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