STB60NF06T4
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STMicroelectronics STB60NF06T4

Manufacturer No:
STB60NF06T4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 60A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB60NF06T4 is a high-performance N-channel Power MOSFET from STMicroelectronics, designed using the unique STripFET™ II process. This device is optimized for minimal input capacitance and gate charge, making it ideal for advanced high-efficiency isolated DC-DC converters in telecom and computer applications. It is also suitable for any application requiring low gate charge drive.

The STB60NF06T4 is available in a D²PAK package and is AEC-Q101 qualified, ensuring its reliability in automotive and other demanding environments. It features exceptional dv/dt capability, is 100% avalanche tested, and has an operating junction temperature range of up to 175°C.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 60 V
Drain-Gate Voltage (VDGR) 60 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 60 A
Continuous Drain Current (ID) at TC = 100°C 42 A
Pulsed Drain Current (IDM) 240 A
Static Drain-Source On-Resistance (RDS(on)) 0.014 Ω (typ.), 0.016 Ω (max.) Ω
Gate Threshold Voltage (VGS(th)) 2 - 4 V V
Thermal Resistance Junction-Case (Rthj-case) 1.36 °C/W °C/W
Operating Junction Temperature (Tj) -55 to 175 °C °C

Key Features

  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Application-oriented characterization
  • Low gate charge drive requirements
  • AEC-Q101 qualified for automotive applications
  • Operating junction temperature range up to 175°C
  • Low threshold drive
  • ECOPACK® packages for environmental compliance

Applications

  • Primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer applications
  • Switching applications requiring low gate charge drive
  • Automotive applications due to AEC-Q101 qualification
  • Any application with high dv/dt and low gate charge requirements

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STB60NF06T4?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the continuous drain current (ID) at 25°C and 100°C?

    The continuous drain current (ID) is 60 A at 25°C and 42 A at 100°C.

  3. What is the typical static drain-source on-resistance (RDS(on))?

    The typical static drain-source on-resistance (RDS(on)) is 0.014 Ω.

  4. What is the gate threshold voltage (VGS(th)) range?

    The gate threshold voltage (VGS(th)) range is 2 to 4 V.

  5. Is the STB60NF06T4 suitable for automotive applications?
  6. What is the operating junction temperature range of the STB60NF06T4?

    The operating junction temperature range is -55 to 175 °C.

  7. What package type is the STB60NF06T4 available in?

    The STB60NF06T4 is available in a D²PAK package.

  8. What are the key features of the STB60NF06T4?

    Key features include exceptional dv/dt capability, 100% avalanche testing, low gate charge drive, and AEC-Q101 qualification.

  9. What are some common applications for the STB60NF06T4?

  10. Is the STB60NF06T4 environmentally compliant?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:16mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1810 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-65°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number STB60NF06T4 STB60NF06LT4
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 30A, 10V 14mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V 66 nC @ 4.5 V
Vgs (Max) ±20V ±15V
Input Capacitance (Ciss) (Max) @ Vds 1810 pF @ 25 V 2000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 110W (Tc) 110W (Tc)
Operating Temperature -65°C ~ 175°C (TJ) -65°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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