STB36N60M6
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STMicroelectronics STB36N60M6

Manufacturer No:
STB36N60M6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 30A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB36N60M6 is a high-performance N-channel power MOSFET from STMicroelectronics, designed for high-power applications. It belongs to the MDmesh M6 series, known for its excellent switching performance and high efficiency. This MOSFET is packaged in a D2PAK (TO-263) package, making it suitable for a variety of power management and control systems.

Key Specifications

Parameter Value
Transistor Polarity N Channel
Continuous Drain Current (Id) 30 A
Drain Source Voltage (Vds) 600 V
On Resistance (Rds(on)) 85 mOhm (typical)
Package D2PAK (TO-263)
Maximum Junction Temperature 150°C
Power Dissipation (Pd) 208 W

Key Features

  • High voltage rating of 600 V, making it suitable for high-power applications.
  • Low on-resistance of 85 mOhm (typical), which reduces power losses and improves efficiency.
  • High continuous drain current of 30 A, supporting demanding power requirements.
  • MDmesh M6 technology for enhanced switching performance and reliability.
  • D2PAK package for good thermal dissipation and ease of use in various applications.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Industrial power systems and control circuits.
  • Automotive systems (where applicable).
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum voltage rating of the STB36N60M6 MOSFET?

    The maximum voltage rating is 600 V.

  2. What is the typical on-resistance of the STB36N60M6?

    The typical on-resistance is 85 mOhm.

  3. What is the maximum continuous drain current of the STB36N60M6?

    The maximum continuous drain current is 30 A.

  4. In what package is the STB36N60M6 available?

    The STB36N60M6 is available in a D2PAK (TO-263) package.

  5. What is the maximum junction temperature for the STB36N60M6?

    The maximum junction temperature is 150°C.

  6. What are some common applications for the STB36N60M6?

    Common applications include power supplies, motor control, industrial power systems, and renewable energy systems.

  7. What technology does the STB36N60M6 use?

    The STB36N60M6 uses MDmesh M6 technology.

  8. How much power can the STB36N60M6 dissipate?

    The STB36N60M6 can dissipate up to 208 W.

  9. Is the STB36N60M6 suitable for automotive applications?

    While it is not specifically marked as automotive-grade, it can be used in some automotive systems where its specifications meet the requirements.

  10. Where can I find detailed datasheets and documentation for the STB36N60M6?

    Detailed datasheets and documentation can be found on the STMicroelectronics official website and through authorized distributors like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44.3 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1960 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number STB36N60M6 STB46N60M6
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 15A, 10V 80mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44.3 nC @ 10 V 53.5 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1960 pF @ 100 V 2340 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 208W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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