Overview
The STB20NM60D is a high-performance N-channel power MOSFET produced by STMicroelectronics. It features the advanced FDmesh™ technology, which combines reduced on-resistance with fast switching capabilities and an intrinsic fast-recovery body diode. This MOSFET is particularly suited for high-power switching applications, especially in bridge topologies and ZVS phase-shift converters.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Drain Current (ID) at TC = 25°C | 20 | A |
| Drain Current (ID) at TC = 100°C | 12.6 | A |
| Pulse Drain Current (IDM) | 80 | A |
| Total Dissipation at TC = 25°C (PTOT) | 192 | W |
| Static Drain-Source On-Resistance (RDS(on)) | 0.26 - 0.29 | Ω |
| Thermal Resistance Junction-Case (Rthj-case) | 0.65 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
| Operating Junction Temperature (Tj) | -65 to 150 | °C |
| Storage Temperature (Tstg) | -65 to 150 | °C |
Key Features
- High dv/dt and avalanche capabilities
- 100% Avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Tight process control and high manufacturing yields
- Intrinsic fast-recovery body diode
- FDmesh™ technology for reduced on-resistance and fast switching
Applications
The STB20NM60D is strongly recommended for various high-power switching applications, including:
- Bridge topologies
- ZVS phase-shift converters
- Other high-power switching applications where fast switching and low on-resistance are critical
Q & A
- What is the maximum drain-source voltage of the STB20NM60D?
The maximum drain-source voltage (VDS) is 600V. - What is the maximum continuous drain current at 25°C?
The maximum continuous drain current at 25°C is 20A. - What is the typical on-resistance of the STB20NM60D?
The typical static drain-source on-resistance (RDS(on)) is between 0.26Ω and 0.29Ω. - What is the maximum junction temperature?
The maximum junction temperature (Tj) is 150°C. - What is the package type of the STB20NM60D?
The package type is D²PAK. - What are the key features of the FDmesh™ technology?
The FDmesh™ technology features reduced on-resistance, fast switching, and an intrinsic fast-recovery body diode. - What are the typical applications for the STB20NM60D?
The STB20NM60D is typically used in bridge topologies and ZVS phase-shift converters. - What is the maximum pulse drain current?
The maximum pulse drain current (IDM) is 80A. - What is the thermal resistance junction-case?
The thermal resistance junction-case (Rthj-case) is 0.65°C/W. - Is the STB20NM60D 100% avalanche tested?
Yes, the STB20NM60D is 100% avalanche tested.
