Overview
The STB185N55F3 is an N-channel enhancement mode Power MOSFET produced by STMicroelectronics. This device is part of the STripFET™ family, known for its ultra-low on-resistance and high packing density. The STB185N55F3 features STMicroelectronics' unique 'single feature size™' strip-based process, which enhances manufacturing reproducibility and reduces critical alignment steps. This results in a transistor with extremely low on-resistance, rugged avalanche characteristics, and low gate charge, making it suitable for high-performance applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 55 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 120 | A |
| Pulsed Drain Current (IDM) | 480 | A |
| Total Dissipation at TC = 25°C | 330 | W |
| Static Drain-Source On Resistance (RDS(on)) | 3.2 mΩ (Typical for D2PAK) | mΩ |
| Gate Threshold Voltage (VGS(th)) | 2 - 4 | V |
| Operating Junction Temperature | -55 to 175 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 0.45 | °C/W |
| Package Type | D2PAK, TO-220 |
Key Features
- Ultra Low On-Resistance: The STB185N55F3 boasts a very low on-resistance of 3.2 mΩ (typical for D2PAK), making it highly efficient for power switching applications.
- Rugged Avalanche Characteristics: The device is 100% avalanche tested, ensuring robust performance under various operating conditions.
- Low Gate Charge: It features low gate charge, which is beneficial for high-frequency switching applications.
- High Packing Density: The 'single feature size™' strip-based process enhances the packing density, contributing to lower on-resistance and improved overall performance.
- ECOPACK® Packages: Available in lead-free ECOPACK® packages, which meet environmental requirements and have a second-level interconnect marked on the package and inner box label.
Applications
- Switching Applications: Ideal for high-frequency switching due to its low on-resistance and low gate charge.
- Automotive: Suitable for automotive applications where high reliability and robust performance are required.
- Power Management: Used in various power management systems where efficient power switching is crucial.
Q & A
- What is the maximum drain-source voltage (VDS) of the STB185N55F3?
The maximum drain-source voltage (VDS) is 55 V.
- What is the typical on-resistance (RDS(on)) of the STB185N55F3 in D2PAK package?
The typical on-resistance (RDS(on)) is 3.2 mΩ for the D2PAK package.
- What is the maximum continuous drain current (ID) at TC = 25°C?
The maximum continuous drain current (ID) at TC = 25°C is 120 A).
- What is the thermal resistance junction-case (Rthj-case) for the STB185N55F3?
The thermal resistance junction-case (Rthj-case) is 0.45 °C/W).
- In what packages is the STB185N55F3 available?
The STB185N55F3 is available in D2PAK and TO-220 packages).
- Is the STB185N55F3 suitable for automotive applications?
Yes, it is suitable for automotive applications due to its robust performance and reliability).
- What is the gate threshold voltage (VGS(th)) range for the STB185N55F3?
The gate threshold voltage (VGS(th)) range is 2 to 4 V).
- What is the maximum operating junction temperature for the STB185N55F3?
The maximum operating junction temperature is 175 °C).
- Is the STB185N55F3 available in lead-free packages?
Yes, it is available in lead-free ECOPACK® packages).
- What is the typical forward transconductance (gfs) for the STB185N55F3?
The typical forward transconductance (gfs) is 150 S).
