STB12NK80ZT4
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STMicroelectronics STB12NK80ZT4

Manufacturer No:
STB12NK80ZT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 10.5A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB12NK80ZT4 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing their advanced SuperMESH™ technology. This device is designed to offer high performance and reliability, making it suitable for demanding applications such as flyback converters and LED lighting. The MOSFET features an enhanced trench gate structure and is Zener-protected, ensuring robust operation under various conditions.

Key Specifications

Parameter Value
Channel Type N-Channel
Drain-Source Voltage (Vds) 800 V
Continuous Drain Current (Id) 10.5 A
On-Resistance (Rds(on)) 750 mΩ @ 10 V, 5.25 A
Gate Threshold Voltage (Vgs(th)) 4.5 V
Package D2PAK
Operating Temperature Range -55°C to 150°C
RoHS Compliance Ecopack2

Key Features

  • Extremely high dv/dt capability
  • Improved ESD capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing reliability
  • Zener-protected for enhanced robustness

Applications

The STB12NK80ZT4 is particularly suited for applications requiring high voltage and current handling, such as:

  • Flyback converters
  • LED lighting systems
  • Power supplies and switching circuits
  • High-power electronic devices

Q & A

  1. What is the drain-source voltage rating of the STB12NK80ZT4?

    The drain-source voltage (Vds) rating is 800 V.

  2. What is the continuous drain current (Id) of the STB12NK80ZT4?

    The continuous drain current (Id) is 10.5 A.

  3. What is the on-resistance (Rds(on)) of the STB12NK80ZT4?

    The on-resistance (Rds(on)) is 750 mΩ @ 10 V, 5.25 A.

  4. What package type does the STB12NK80ZT4 come in?

    The STB12NK80ZT4 comes in a D2PAK package.

  5. Is the STB12NK80ZT4 RoHS compliant?
  6. What are the key features of the STB12NK80ZT4?

    The key features include high dv/dt capability, improved ESD capability, 100% avalanche testing, minimized gate charge, low intrinsic capacitances, and good manufacturing reliability.

  7. What are some common applications for the STB12NK80ZT4?
  8. What is the operating temperature range of the STB12NK80ZT4?
  9. Is the STB12NK80ZT4 Zener-protected?
  10. Where can I find detailed specifications and datasheets for the STB12NK80ZT4?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 5.25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:87 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2620 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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In Stock

$5.30
160

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