SCTW100N65G2AG
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STMicroelectronics SCTW100N65G2AG

Manufacturer No:
SCTW100N65G2AG
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
SICFET N-CH 650V 100A HIP247
Delivery:
Payment:
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Product Introduction

Overview

The SCTW100N65G2AG is a silicon carbide (SiC) Power MOSFET developed by STMicroelectronics using their advanced and innovative 2nd generation SiC MOSFET technology. This device is notable for its remarkably low on-resistance per unit area and excellent switching performance, with switching losses that are almost independent of junction temperature. It is designed to operate at very high junction temperatures, making it suitable for demanding applications.

Key Specifications

Parameter Value
Part Number SCTW100N65G2AG
Marketing Status Active
Package HIP247
Grade Automotive
RoHS Compliance Grade Ecopack2
Operating Junction Temperature (°C) -40 to 200
Vds (V) 650
Id (A) 100

Key Features

  • AEC-Q101 qualified, ensuring reliability and performance in automotive applications.
  • Very fast and robust intrinsic body diode, enhancing overall device efficiency.
  • Extremely low gate charge and input capacitance, reducing switching losses and improving switching speed.
  • Very high operating junction temperature capability (Tj = 200 °C), making it suitable for high-temperature environments.

Applications

The SCTW100N65G2AG is primarily recommended for automotive applications due to its AEC-Q101 qualification and high reliability. It is also suitable for other high-power applications where low on-resistance and excellent switching performance are critical, such as in power supplies, motor drives, and renewable energy systems.

Q & A

  1. What is the SCTW100N65G2AG?

    The SCTW100N65G2AG is a silicon carbide (SiC) Power MOSFET developed by STMicroelectronics.

  2. What technology is used in the SCTW100N65G2AG?

    It uses STMicroelectronics' advanced and innovative 2nd generation SiC MOSFET technology.

  3. What are the key features of the SCTW100N65G2AG?

    Key features include AEC-Q101 qualification, fast and robust intrinsic body diode, low gate charge and input capacitance, and high operating junction temperature capability.

  4. What is the operating junction temperature range of the SCTW100N65G2AG?

    The operating junction temperature range is -40 °C to 200 °C.

  5. What package type is the SCTW100N65G2AG available in?

    The device is available in the HIP247 package.

  6. Is the SCTW100N65G2AG RoHS compliant?

    Yes, it is RoHS compliant with an Ecopack2 grade.

  7. What are the typical applications for the SCTW100N65G2AG?

    It is primarily used in automotive applications and other high-power applications requiring low on-resistance and excellent switching performance.

  8. What is the maximum drain-source voltage (Vds) of the SCTW100N65G2AG?

    The maximum drain-source voltage (Vds) is 650 V.

  9. What is the maximum drain current (Id) of the SCTW100N65G2AG?

    The maximum drain current (Id) is 100 A.

  10. Where can I find more detailed specifications and datasheets for the SCTW100N65G2AG?

    You can find detailed specifications and datasheets on the STMicroelectronics website or through distributors like Arrow, TME, and LCSC.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V
Rds On (Max) @ Id, Vgs:26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id:5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:162 nC @ 18 V
Vgs (Max):+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:3315 pF @ 520 V
FET Feature:- 
Power Dissipation (Max):420W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:HiP247™
Package / Case:TO-247-3
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