Overview
The SCTH90N65G2V-7 is a silicon carbide (SiC) Power MOSFET developed by STMicroelectronics using their advanced 2nd generation SiC MOSFET technology. This device is designed to offer high performance and reliability in various power management applications. It features a very low on-resistance per unit area and excellent switching characteristics, making it suitable for high-frequency and high-power applications. The SCTH90N65G2V-7 operates with a maximum drain-source voltage of 650 V and a continuous drain current of 116 A at 25°C, with an operating junction temperature range of up to 175°C.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-source voltage) | 650 | V |
| VGS (Gate-source voltage) | -10 to 22 | V |
| ID (Continuous drain current at TC = 25°C) | 116 | A |
| ID (Continuous drain current at TC = 100°C) | 82 | A |
| IDM (Pulsed drain current) | 220 | A |
| PTOT (Total power dissipation at TC = 25°C) | 484 | W |
| Tstg (Storage temperature range) | -55 to 175 | °C |
| TJ (Operating junction temperature range) | -55 to 175 | °C |
| RDS(on) (Static drain-source on-resistance at VGS = 18 V, ID = 50 A) | 18 - 24 | mΩ |
| Ciss (Input capacitance at VDS = 400 V, f = 1 MHz, VGS = 0 V) | 3380 | pF |
| Coss (Output capacitance) | 294 | pF |
| Crss (Reverse transfer capacitance) | 49 | pF |
| Qg (Total gate charge at VDD = 400 V, ID = 50 A, VGS = -5 to 18 V) | 157 | nC |
Key Features
- Very high operating junction temperature capability (TJ = 175 °C)
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitances
- Low on-resistance per unit area
- Excellent switching performance with minimal variation of switching loss over junction temperature
- H²PAK-7 package for efficient thermal management and compact design
Applications
- Switching applications
- Power supply for renewable energy systems
- High frequency DC-DC converters
Q & A
- What is the maximum drain-source voltage of the SCTH90N65G2V-7?
The maximum drain-source voltage is 650 V.
- What is the continuous drain current at 25°C?
The continuous drain current at 25°C is 116 A.
- What is the operating junction temperature range of the SCTH90N65G2V-7?
The operating junction temperature range is -55 to 175 °C.
- What is the typical on-resistance of the SCTH90N65G2V-7 at VGS = 18 V and ID = 50 A?
The typical on-resistance is 18-24 mΩ.
- What are the key features of the SCTH90N65G2V-7?
The key features include very high operating junction temperature capability, fast and robust intrinsic body diode, extremely low gate charge and input capacitances, and low on-resistance per unit area.
- In what package is the SCTH90N65G2V-7 available?
The device is available in the H²PAK-7 package.
- What are some typical applications of the SCTH90N65G2V-7?
Typical applications include switching applications, power supply for renewable energy systems, and high frequency DC-DC converters.
- What is the total power dissipation at TC = 25°C?
The total power dissipation at TC = 25°C is 484 W.
- What is the gate-source voltage range for the SCTH90N65G2V-7?
The gate-source voltage range is -10 to 22 V.
- What is the reverse recovery time of the intrinsic diode?
The reverse recovery time is approximately 17 ns.
