SCTH100N65G2-7AG
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STMicroelectronics SCTH100N65G2-7AG

Manufacturer No:
SCTH100N65G2-7AG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
SICFET N-CH 650V 95A H2PAK-7
Delivery:
Payment:
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Product Introduction

Overview

The SCTH100N65G2-7AG is an automotive-grade silicon carbide (SiC) Power MOSFET produced by STMicroelectronics. This device is designed to operate at high voltages and currents, making it suitable for demanding applications in the automotive and industrial sectors. The SCTH100N65G2-7AG features a voltage rating of 650 V and a typical on-resistance of 20 mOhm, with a maximum current rating of 95 A. It is packaged in an H2PAK-7 package, which is known for its high power density and thermal performance.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
Typical On-Resistance (Rds(on))20 mOhm
Maximum Current (Id)95 A
Package TypeH2PAK-7
Maximum Junction Temperature (Tj)175°C
AEC-Q101 QualifiedYes

Key Features

  • High voltage rating of 650 V, suitable for high-power applications.
  • Low typical on-resistance of 20 mOhm, reducing energy losses and improving efficiency.
  • High current rating of 95 A, enabling the handling of significant power loads.
  • AEC-Q101 qualified, ensuring reliability and robustness for automotive applications.
  • H2PAK-7 package, offering high power density and excellent thermal performance.

Applications

  • Electric Vehicle (EV) and Hybrid Electric Vehicle (HEV) systems.
  • High-power DC-DC converters and power supplies.
  • Industrial power systems, including motor drives and power factor correction (PFC) circuits.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the voltage rating of the SCTH100N65G2-7AG?
    The voltage rating of the SCTH100N65G2-7AG is 650 V.
  2. What is the typical on-resistance of the SCTH100N65G2-7AG?
    The typical on-resistance is 20 mOhm.
  3. What is the maximum current rating of the SCTH100N65G2-7AG?
    The maximum current rating is 95 A.
  4. In what package is the SCTH100N65G2-7AG available?
    The SCTH100N65G2-7AG is available in an H2PAK-7 package.
  5. Is the SCTH100N65G2-7AG AEC-Q101 qualified?
    Yes, the SCTH100N65G2-7AG is AEC-Q101 qualified.
  6. What is the maximum junction temperature of the SCTH100N65G2-7AG?
    The maximum junction temperature is 175°C.
  7. What are some common applications for the SCTH100N65G2-7AG?
    Common applications include electric vehicles, high-power DC-DC converters, industrial power systems, and renewable energy systems.
  8. Why is silicon carbide used in this MOSFET?
    Silicon carbide is used due to its high thermal conductivity, low on-resistance, and high voltage handling capabilities, making it ideal for high-power applications.
  9. How does the H2PAK-7 package benefit the SCTH100N65G2-7AG?
    The H2PAK-7 package offers high power density and excellent thermal performance, which is crucial for efficient heat dissipation in high-power applications.
  10. Is the SCTH100N65G2-7AG suitable for industrial use?
    Yes, it is suitable for industrial use due to its high voltage and current ratings, as well as its robust construction and AEC-Q101 qualification.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:95A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V
Rds On (Max) @ Id, Vgs:26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id:5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:162 nC @ 18 V
Vgs (Max):+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:3315 pF @ 520 V
FET Feature:- 
Power Dissipation (Max):360W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2PAK-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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