SCT20N120AG
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STMicroelectronics SCT20N120AG

Manufacturer No:
SCT20N120AG
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
SICFET N-CH 1200V 20A HIP247
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The STMicroelectronics SCT20N120AG is a silicon carbide (SiC) Power MOSFET that leverages the advanced properties of wide bandgap materials. This device is designed for high-efficiency and high-power density applications, offering superior thermal and electrical performance. The SCT20N120AG is housed in the proprietary HiP247 package, which enhances thermal capability while maintaining an industry-standard outline. It is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.

Key Specifications

Parameter Value Unit
Technology SiCFET (Silicon Carbide)
FET Type N-Ch
No. of Channels 1
Drain-to-Source Voltage (Vdss) 1200 V V
Drain Current (continuous) at TC = 25 °C 20 A A
Drain Current (continuous) at TC = 100 °C 16 A A
Drain Current (pulsed) 45 A A
Total Power Dissipation at TC = 25 °C 153 W W
Operating Temperature Range -55 °C to +200 °C °C
Package Style TO-247-3
Mounting Method Through Hole
Static Drain-Source On-Resistance (RDS(on)) 169 - 239 mΩ (typ. at VGS = 20 V, ID = 10 A)
Input Capacitance (Ciss) 650 pF pF
Thermal Resistance Junction-Case (Rthj-case) 1.14 °C/W °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 40 °C/W °C/W

Key Features

  • AEC-Q101 Qualified: Suitable for automotive and other demanding environments.
  • High Operating Temperature Capability: Can operate up to 200 °C, making it ideal for high-temperature applications.
  • Low On-Resistance Variation with Temperature: Ensures consistent performance across a wide temperature range.
  • Fast and Robust Intrinsic Body Diode: Enhances switching performance and reliability.
  • Low Capacitance: Reduces switching losses and improves overall efficiency.
  • HiP247 Package: Provides superior thermal capability while maintaining an industry-standard outline.

Applications

  • Motor Drives: Suitable for high-efficiency motor control systems.
  • EV Chargers: Ideal for electric vehicle charging applications due to its high power density and efficiency.
  • High Voltage DC-DC Converters: Used in high-voltage conversion applications requiring low losses and high reliability.
  • Switch Mode Power Supplies: Enhances the efficiency and performance of switch-mode power supplies.

Q & A

  1. What is the maximum drain-to-source voltage of the SCT20N120AG?

    The maximum drain-to-source voltage (Vdss) is 1200 V.

  2. What is the continuous drain current at 25 °C and 100 °C?

    The continuous drain current is 20 A at 25 °C and 16 A at 100 °C.

  3. What is the total power dissipation at 25 °C?

    The total power dissipation is 153 W at 25 °C.

  4. What is the operating temperature range of the SCT20N120AG?

    The operating temperature range is -55 °C to +200 °C.

  5. What package style and mounting method does the SCT20N120AG use?

    The package style is TO-247-3, and the mounting method is Through Hole.

  6. What are the key features of the SCT20N120AG?

    Key features include AEC-Q101 qualification, high operating temperature capability, low on-resistance variation with temperature, fast and robust intrinsic body diode, low capacitance, and the HiP247 package.

  7. What are some typical applications of the SCT20N120AG?

    Typical applications include motor drives, EV chargers, high voltage DC-DC converters, and switch mode power supplies.

  8. What is the thermal resistance junction-case (Rthj-case) of the SCT20N120AG?

    The thermal resistance junction-case (Rthj-case) is 1.14 °C/W.

  9. What is the input capacitance (Ciss) of the SCT20N120AG?

    The input capacitance (Ciss) is 650 pF.

  10. Is the SCT20N120AG suitable for automotive applications?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:239mOhm @ 10A, 20V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:650 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):153W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:HiP247™
Package / Case:TO-247-3
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Similar Products

Part Number SCT20N120AG SCT10N120AG
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V
Rds On (Max) @ Id, Vgs 239mOhm @ 10A, 20V 690mOhm @ 6A, 20V
Vgs(th) (Max) @ Id 3.5V @ 1mA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 20 V 22 nC @ 20 V
Vgs (Max) +25V, -10V +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 400 V 290 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 153W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package HiP247™ HiP247™
Package / Case TO-247-3 TO-247-3

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