SCT10N120AG
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STMicroelectronics SCT10N120AG

Manufacturer No:
SCT10N120AG
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
SICFET N-CH 1200V 12A HIP247
Delivery:
Payment:
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Product Introduction

Overview

The SCT10N120AG is an automotive-grade Silicon Carbide (SiC) Power MOSFET produced by STMicroelectronics. This device is designed to operate at high voltages and currents, making it suitable for various demanding applications. The SCT10N120AG features a voltage rating of 1200 V and a current rating of 12 A, with a typical on-resistance of 520 mΩ at a junction temperature of 150°C. It is packaged in the HiP247 package, which is known for its high power density and thermal performance.

Key Specifications

Parameter Value Unit
Voltage Rating (Vds) 1200 V
Current Rating (Id) 12 A
Typical On-Resistance (Rds(on)) at TJ = 150°C 520
Package HiP247
Application Automotive-grade

Key Features

  • High Voltage and Current Capability: The SCT10N120AG can handle up to 1200 V and 12 A, making it suitable for high-power applications.
  • Low On-Resistance: With a typical on-resistance of 520 mΩ at 150°C, this MOSFET minimizes power losses and enhances efficiency.
  • Automotive-Grade: Designed to meet the stringent requirements of automotive applications, ensuring reliability and durability.
  • HiP247 Package: Offers high power density and excellent thermal performance, making it ideal for compact and efficient designs.

Applications

  • Electric Vehicles (EVs) and Hybrid Electric Vehicles (HEVs): Suitable for power conversion and motor control in EV and HEV systems.
  • Power Supplies and Converters: Used in high-efficiency power supplies, DC-DC converters, and AC-DC converters.
  • Industrial Power Systems: Applicable in industrial power systems requiring high reliability and efficiency.
  • Renewable Energy Systems: Can be used in solar and wind power systems for efficient power conversion.

Q & A

  1. What is the voltage rating of the SCT10N120AG?

    The voltage rating of the SCT10N120AG is 1200 V.

  2. What is the current rating of the SCT10N120AG?

    The current rating of the SCT10N120AG is 12 A.

  3. What is the typical on-resistance of the SCT10N120AG at TJ = 150°C?

    The typical on-resistance is 520 mΩ at TJ = 150°C.

  4. In what package is the SCT10N120AG available?

    The SCT10N120AG is available in the HiP247 package.

  5. Is the SCT10N120AG suitable for automotive applications?

    Yes, the SCT10N120AG is an automotive-grade component.

  6. What are some common applications of the SCT10N120AG?

    Common applications include electric vehicles, power supplies, industrial power systems, and renewable energy systems.

  7. Why is the HiP247 package used for the SCT10N120AG?

    The HiP247 package is used for its high power density and excellent thermal performance.

  8. How does the SCT10N120AG minimize power losses?

    The SCT10N120AG minimizes power losses through its low on-resistance of 520 mΩ at 150°C.

  9. Can the SCT10N120AG be used in high-efficiency power supplies?

    Yes, the SCT10N120AG is suitable for use in high-efficiency power supplies and converters.

  10. Is the SCT10N120AG reliable for industrial use?

    Yes, the SCT10N120AG is designed to meet the reliability and durability requirements of industrial applications.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:690mOhm @ 6A, 20V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:HiP247™
Package / Case:TO-247-3
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Similar Products

Part Number SCT10N120AG SCT20N120AG
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V
Rds On (Max) @ Id, Vgs 690mOhm @ 6A, 20V 239mOhm @ 10A, 20V
Vgs(th) (Max) @ Id 3.5V @ 250µA 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 20 V 45 nC @ 20 V
Vgs (Max) +25V, -10V +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 400 V 650 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 150W (Tc) 153W (Tc)
Operating Temperature -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package HiP247™ HiP247™
Package / Case TO-247-3 TO-247-3

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