Fairchild Semiconductor FQD7N20LTM

Manufacturer No:: FQD7N20LTM
Manufacturer:: Fairchild Semiconductor
Package:: Bulk
Description:: POWER FIELD-EFFECT TRANSISTOR, 5
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Product Introduction

Overview

The FQD7N20LTM is an N-Channel Enhancement Mode Power MOSFET produced by Fairchild Semiconductor, now part of onsemi. This MOSFET is fabricated using onsemi's proprietary planar stripe and DMOS technology, which enhances its performance and reliability. It is designed to operate at high voltages and currents, making it suitable for a variety of power management applications.

Key Specifications

Parameter	Value
V_DS (Drain-Source Voltage)	200 V
I_D (Continuous Drain Current)	5.5 A
R_DS(on) (On-Resistance)	750 mΩ
V_GS(th) (Threshold Voltage)	2.0 - 4.0 V
P_D (Power Dissipation)	50 W
T_J (Junction Temperature)	-55°C to 150°C
Package	TO-220AB

Key Features

High voltage and current handling capabilities.
Low on-resistance (R_DS(on)) of 750 mΩ.
Enhancement mode operation.
TO-220AB package for good heat dissipation.
Wide operating junction temperature range (-55°C to 150°C).

Applications

Power supplies and DC-DC converters.
Motor control and drive systems.
Switching regulators and inverters.
Automotive and industrial power management systems.
Audio amplifiers and other high-power electronic devices.

Q & A

What is the maximum drain-source voltage of the FQD7N20LTM MOSFET?
The maximum drain-source voltage (V_DS) is 200 V.
What is the continuous drain current rating of the FQD7N20LTM?
The continuous drain current (I_D) is 5.5 A.
What is the on-resistance (R_DS(on)) of the FQD7N20LTM?
The on-resistance (R_DS(on)) is 750 mΩ.
What is the threshold voltage range of the FQD7N20LTM?
The threshold voltage (V_GS(th)) range is 2.0 - 4.0 V.
What is the maximum power dissipation of the FQD7N20LTM?
The maximum power dissipation (P_D) is 50 W.
What is the junction temperature range of the FQD7N20LTM?
The junction temperature (T_J) range is -55°C to 150°C.
What package type is the FQD7N20LTM available in?
The FQD7N20LTM is available in the TO-220AB package.
What are some common applications of the FQD7N20LTM?
Common applications include power supplies, DC-DC converters, motor control systems, switching regulators, and automotive power management systems.
Why is the FQD7N20LTM suitable for high-power applications?
The FQD7N20LTM is suitable for high-power applications due to its high voltage and current handling capabilities, low on-resistance, and robust thermal performance.
Where can I find detailed specifications and datasheets for the FQD7N20LTM?
Detailed specifications and datasheets can be found on the official onsemi website, as well as through distributors like Mouser and Digi-Key.

In Stock

UnitPrice: $0.29

Quantity: 1,483

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Part Number	FQD7N20LTM	FQD7N20TM	FQD4N20LTM	FQD5N20LTM	FQD7N10LTM	FQD7N20LTF
Manufacturer	Fairchild Semiconductor	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Active	Obsolete	Obsolete	Last Time Buy	Last Time Buy	Obsolete
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V	200 V	200 V	200 V	100 V	200 V
Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)	5.3A (Tc)	3.2A (Tc)	3.8A (Tc)	5.8A (Tc)	5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V	10V	5V, 10V	5V, 10V	5V, 10V	5V, 10V
Rds On (Max) @ Id, Vgs	750mOhm @ 2.75A, 10V	690mOhm @ 2.65A, 10V	1.35Ohm @ 1.6A, 10V	1.2Ohm @ 1.9A, 10V	350mOhm @ 2.9A, 10V	750mOhm @ 2.75A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA	5V @ 250µA	2V @ 250µA	2V @ 250µA	2V @ 250µA	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 5 V	10 nC @ 10 V	5.2 nC @ 5 V	6.2 nC @ 5 V	6 nC @ 5 V	9 nC @ 5 V
Vgs (Max)	±20V	±30V	±20V	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	500 pF @ 25 V	400 pF @ 25 V	310 pF @ 25 V	325 pF @ 25 V	290 pF @ 25 V	500 pF @ 25 V
FET Feature	-	-	-	-	-	-
Power Dissipation (Max)	2.5W (Ta), 45W (Tc)	2.5W (Ta), 45W (Tc)	2.5W (Ta), 30W (Tc)	2.5W (Ta), 37W (Tc)	2.5W (Ta), 25W (Tc)	2.5W (Ta), 45W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	TO-252, (D-Pak)	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200 V
Current - Continuous Drain (Id) @ 25°C:	5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	750mOhm @ 2.75A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	9 nC @ 5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	500 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 45W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-252, (D-Pak)
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

Fairchild Semiconductor FQD7N20LTM

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

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