Overview
The RFD14N05LSM9A is an N-channel logic level power MOSFET manufactured by onsemi, utilizing the advanced MegaFET process. This device is designed to provide outstanding performance in various high-power applications. It features a special gate oxide design that allows for full rated conductance at gate biases in the 3V-5V range, making it compatible with logic level (5V) integrated circuits. The RFD14N05LSM9A is available in the TO-252AA package and is suitable for use in switching regulators, switching converters, motor drivers, and relay drivers.
Key Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | TC = 25°C | - | - | 50 | V |
| Drain to Gate Voltage | VDGR | RGS = 20kΩ | - | - | 50 | V |
| Gate to Source Voltage | VGS | - | - | - | - | V |
| Drain to Source Breakdown Voltage | BVDSS | ID = 250µA, VGS = 0V | 50 | - | - | V |
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, ID = 250µA | 1 | - | 2 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 40V, VGS = 0V | - | - | 1 µA | - |
| Gate to Source Leakage Current | IGSS | VGS = ±10V | - | - | ±100 nA | - |
| Drain to Source On Resistance | rDS(ON) | ID = 14A, VGS = 5V | - | - | 0.100 Ω | - |
| Turn-On Time | t(ON) | VDD = 25V, ID = 7A, RL = 3.57Ω, VGS = 5V, RGS = 0.6Ω | - | - | 60 ns | - |
| Turn-On Delay Time | td(ON) | - | 13 | - | ns | |
| Rise Time | tr | - | 24 | - | ns | |
| Turn-Off Delay Time | td(OFF) | - | 42 | - | ns | |
| Fall Time | tf | - | 16 | - | ns | |
| Turn-Off Time | t(OFF) | - | - | 100 ns | - | |
| Total Gate Charge | Qg(TOT) | VGS = 0V to 10V, VDD = 40V, ID = 14A, RL = 2.86Ω | - | - | 40 nC | |
| Gate Charge at 5V | Qg(5) | VGS = 0V to 5V | - | - | 25 nC | |
| Threshold Gate Charge | Qg(TH) | VGS = 0V to 1V | - | - | 1.5 nC | |
| Input Capacitance | CISS | VDS = 25V, VGS = 0V, f = 1MHz | - | 670 | pF | |
| Output Capacitance | COSS | - | - | 185 | pF | |
| Reverse Transfer Capacitance | CRSS | - | - | 50 | pF | |
| Thermal Resistance Junction to Case | RθJC | - | - | 3.125 | °C/W | |
| Thermal Resistance Junction to Ambient | RθJA | TO-251 | - | - | 100 | °C/W |
| Source to Drain Diode Voltage | VSD | ISD = 14A | - | - | 1.5 | V |
| Diode Reverse Recovery Time | trr | ISD = 14A, dISD/dt = 100A/µs | - | - | 125 ns |
Key Features
- High Current Capability: The RFD14N05LSM9A can handle up to 14A of continuous drain current.
- Low On-Resistance: With a drain to source on-resistance (rDS(ON)) of 0.100 Ω, this MOSFET minimizes power losses.
- Logic Level Compatibility: It can be driven directly from CMOS, NMOS, and TTL circuits due to its gate bias in the 3V-5V range.
- High Operating Temperature: The device can operate up to a junction temperature of 175°C.
- Temperature Compensating PSPICE Model: Available for precise simulation and design.
- UIS Rating Curve and Peak Current Capability Curve: Ensures robust performance under various operating conditions.
Applications
The RFD14N05LSM9A is suitable for a variety of high-power applications, including:
- Switching Regulators: Efficient power conversion in DC-DC converters.
- Switching Converters: Used in power supplies and other conversion circuits.
- Motor Drivers: Controls and drives DC motors efficiently.
- Relay Drivers: Drives relay coils and other inductive loads.
Q & A
- What is the maximum drain to source voltage for the RFD14N05LSM9A?
The maximum drain to source voltage (VDSS) is 50V. - What is the typical on-resistance of the RFD14N05LSM9A?
The typical drain to source on-resistance (rDS(ON)) is 0.100 Ω. - What is the gate threshold voltage range for this MOSFET?
The gate threshold voltage (VGS(TH)) ranges from 1V to 2V. - Can the RFD14N05LSM9A be driven directly from logic level circuits?
Yes, it can be driven directly from CMOS, NMOS, and TTL circuits. - What is the maximum operating junction temperature for this device?
The maximum operating junction temperature is 175°C. - What is the thermal resistance junction to case for the TO-252AA package?
The thermal resistance junction to case (RθJC) is 3.125 °C/W. - What is the diode reverse recovery time for the RFD14N05LSM9A?
The diode reverse recovery time (trr) is up to 125 ns. - What are the typical turn-on and turn-off times for this MOSFET?
The typical turn-on time (t(ON)) is 60 ns, and the typical turn-off time (t(OFF)) is 100 ns. - What is the input capacitance of the RFD14N05LSM9A?
The input capacitance (CISS) is approximately 670 pF. - In what package is the RFD14N05LSM9A available?
The RFD14N05LSM9A is available in the TO-252AA package.
