Overview
The NVTFS6H850NTAG is a high-performance N-Channel MOSFET produced by onsemi. This device is designed to meet the stringent requirements of automotive and industrial applications, offering a combination of high current handling, low on-resistance, and compact packaging. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and durability under extreme conditions.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Channel Type | N-Channel | ||
| Maximum Continuous Drain Current | ID | 68 A | |
| Maximum Drain Source Voltage | VDSS | 80 V | |
| Maximum Drain Source Resistance | RDS(on) | 9.5 mΩ | |
| Maximum Gate Threshold Voltage | VGS(TH) | 4 V | |
| Minimum Gate Threshold Voltage | VGS(TH) | 2 V | |
| Maximum Power Dissipation | PD | 107 W | |
| Maximum Gate Source Voltage | VGS | ±20 V | |
| Package Type | WDFN | ||
| Mounting Type | Surface Mount | ||
| Pin Count | 8 | ||
| Maximum Operating Temperature | TJ | +175 °C | |
| Minimum Operating Temperature | TJ | -55 °C | |
| Forward Diode Voltage | VSD | 1.2 V |
Key Features
- Compact Size: The MOSFET features a small footprint of 3.3 x 3.3 mm, making it ideal for compact design applications.
- Low RDS(on): With a maximum drain-source on-resistance of 9.5 mΩ, this device minimizes conduction losses.
- Low Capacitance: Low input, output, and reverse transfer capacitances help minimize driver losses.
- AEC-Q101 Qualified and PPAP Capable: Meets stringent automotive requirements, ensuring durability and performance under extreme conditions.
- Ultra-low Power Consumption: Designed to operate with low quiescent current drain, reducing overall power consumption.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with international regulations.
Applications
The NVTFS6H850NTAG is primarily used in automotive and industrial applications where high reliability and performance are critical. Some specific use cases include:
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability, ensuring it meets the industry's stringent requirements.
- Power Management: Used in power management systems where high current handling and low on-resistance are necessary.
- Industrial Control Systems: Ideal for industrial control systems that require robust and reliable power switching components).
Q & A
- What is the maximum continuous drain current of the NVTFS6H850NTAG MOSFET?
The maximum continuous drain current is 68 A).
- What is the maximum drain-source voltage of the NVTFS6H850NTAG MOSFET?
The maximum drain-source voltage is 80 V).
- What is the package type of the NVTFS6H850NTAG MOSFET?
The package type is WDFN (8-pin)).
- Is the NVTFS6H850NTAG MOSFET AEC-Q101 qualified?
Yes, the NVTFS6H850NTAG is AEC-Q101 qualified and PPAP capable).
- What is the maximum operating temperature of the NVTFS6H850NTAG MOSFET?
The maximum operating temperature is +175 °C, and the minimum is -55 °C).
- What is the forward diode voltage of the NVTFS6H850NTAG MOSFET?
The forward diode voltage is 1.2 V).
- Is the NVTFS6H850NTAG MOSFET Pb-Free and RoHS compliant?
Yes, the device is Pb-Free and RoHS compliant).
- What are the key features of the NVTFS6H850NTAG MOSFET?
The key features include a small footprint, low RDS(on), low capacitance, and AEC-Q101 qualification).
- In which applications is the NVTFS6H850NTAG MOSFET typically used?
It is typically used in automotive and industrial applications where high reliability and performance are critical).
- What is the maximum gate-source voltage of the NVTFS6H850NTAG MOSFET?
The maximum gate-source voltage is ±20 V).
