NVTFS5C680NLTAG
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onsemi NVTFS5C680NLTAG

Manufacturer No:
NVTFS5C680NLTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 7.82A/20A 8WDFN
Delivery:
Payment:
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Product Introduction

Overview

The NVTFS5C680NLTAG is a power MOSFET manufactured by onsemi, designed for high-performance applications. This N-Channel MOSFET features a compact 8-WDFN package with dimensions of 3.3x3.3 mm, making it ideal for space-constrained designs. It is AEC-Q101 qualified and Pb-free, ensuring compliance with RoHS standards. The device is known for its low RDS(on) and low capacitance, which minimize conduction and driver losses, respectively.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Breakdown Voltage VDS 60 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TC = 25°C) ID 20 A
Continuous Drain Current (TA = 25°C) ID 7.82 A
Power Dissipation (TC = 25°C) PD 20 W
Power Dissipation (TA = 25°C) PD 3.0 W
Gate Threshold Voltage VGS(TH) 1.2 - 2.2 V
Drain-to-Source On Resistance (VGS = 10 V, ID = 10 A) RDS(on) 22 - 26.5
Input Capacitance Ciss 327 pF
Operating Junction and Storage Temperature TJ, Tstg -55 to +175 °C

Key Features

The NVTFS5C680NLTAG MOSFET boasts several key features that make it a robust choice for various applications:

  • Compact Design: The 8-WDFN package measures 3.3x3.3 mm, ideal for space-constrained designs.
  • Low RDS(on): With a drain-to-source on resistance of 22-26.5 mΩ at VGS = 10 V, it minimizes conduction losses.
  • Low Capacitance: Low input, output, and reverse transfer capacitances reduce driver losses.
  • AEC-Q101 Qualified: Ensures the device meets automotive standards for reliability and performance.
  • Pb-Free and RoHS Compliant: Environmentally friendly and compliant with international regulations.
  • High Current Capability: Supports continuous drain currents up to 20 A at TC = 25°C and 7.82 A at TA = 25°C.

Applications

The NVTFS5C680NLTAG MOSFET is suitable for a variety of applications, including:

  • Automotive Systems: Given its AEC-Q101 qualification, it is ideal for use in automotive power management, motor control, and other high-reliability applications.
  • Industrial Power Management: Used in power supplies, DC-DC converters, and motor drives due to its high current handling and low RDS(on).
  • Consumer Electronics: Suitable for power management in consumer electronics such as laptops, tablets, and smartphones.
  • Renewable Energy Systems: Can be used in solar and wind power systems for efficient power conversion.

Q & A

  1. What is the maximum drain-to-source breakdown voltage of the NVTFS5C680NLTAG MOSFET?

    The maximum drain-to-source breakdown voltage is 60 V.

  2. What is the typical gate threshold voltage of this MOSFET?

    The typical gate threshold voltage ranges from 1.2 to 2.2 V.

  3. What is the continuous drain current at TC = 25°C?

    The continuous drain current at TC = 25°C is 20 A.

  4. What is the power dissipation at TA = 25°C?

    The power dissipation at TA = 25°C is 3.0 W.

  5. Is the NVTFS5C680NLTAG MOSFET RoHS compliant?

    Yes, the NVTFS5C680NLTAG MOSFET is Pb-free and RoHS compliant.

  6. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -55 to +175°C.

  7. What is the typical input capacitance of this MOSFET?

    The typical input capacitance is 327 pF.

  8. What are the key features of the NVTFS5C680NLTAG MOSFET?

    Key features include a compact 8-WDFN package, low RDS(on), low capacitance, AEC-Q101 qualification, and Pb-free/RoHS compliance.

  9. In which applications is the NVTFS5C680NLTAG commonly used?

    It is commonly used in automotive systems, industrial power management, consumer electronics, and renewable energy systems.

  10. What is the maximum gate-to-source voltage?

    The maximum gate-to-source voltage is ±20 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:7.82A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:26.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:327 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 20W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Same Series
NVTFS5C680NLWFTAG
NVTFS5C680NLWFTAG
MOSFET N-CH 60V 7.82A/20A 8WDFN

Similar Products

Part Number NVTFS5C680NLTAG NVTFS5C670NLTAG
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 7.82A (Ta), 20A (Tc) 16A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 26.5mOhm @ 10A, 10V 6.8mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 327 pF @ 25 V 1400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 20W (Tc) 3.2W (Ta), 63W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

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