Overview
The NVTFS5C680NLTAG is a power MOSFET manufactured by onsemi, designed for high-performance applications. This N-Channel MOSFET features a compact 8-WDFN package with dimensions of 3.3x3.3 mm, making it ideal for space-constrained designs. It is AEC-Q101 qualified and Pb-free, ensuring compliance with RoHS standards. The device is known for its low RDS(on) and low capacitance, which minimize conduction and driver losses, respectively.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Breakdown Voltage | VDS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 20 | A |
| Continuous Drain Current (TA = 25°C) | ID | 7.82 | A |
| Power Dissipation (TC = 25°C) | PD | 20 | W |
| Power Dissipation (TA = 25°C) | PD | 3.0 | W |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.2 | V |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 10 A) | RDS(on) | 22 - 26.5 | mΩ |
| Input Capacitance | Ciss | 327 | pF |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to +175 | °C |
Key Features
The NVTFS5C680NLTAG MOSFET boasts several key features that make it a robust choice for various applications:
- Compact Design: The 8-WDFN package measures 3.3x3.3 mm, ideal for space-constrained designs.
- Low RDS(on): With a drain-to-source on resistance of 22-26.5 mΩ at VGS = 10 V, it minimizes conduction losses.
- Low Capacitance: Low input, output, and reverse transfer capacitances reduce driver losses.
- AEC-Q101 Qualified: Ensures the device meets automotive standards for reliability and performance.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with international regulations.
- High Current Capability: Supports continuous drain currents up to 20 A at TC = 25°C and 7.82 A at TA = 25°C.
Applications
The NVTFS5C680NLTAG MOSFET is suitable for a variety of applications, including:
- Automotive Systems: Given its AEC-Q101 qualification, it is ideal for use in automotive power management, motor control, and other high-reliability applications.
- Industrial Power Management: Used in power supplies, DC-DC converters, and motor drives due to its high current handling and low RDS(on).
- Consumer Electronics: Suitable for power management in consumer electronics such as laptops, tablets, and smartphones.
- Renewable Energy Systems: Can be used in solar and wind power systems for efficient power conversion.
Q & A
- What is the maximum drain-to-source breakdown voltage of the NVTFS5C680NLTAG MOSFET?
The maximum drain-to-source breakdown voltage is 60 V.
- What is the typical gate threshold voltage of this MOSFET?
The typical gate threshold voltage ranges from 1.2 to 2.2 V.
- What is the continuous drain current at TC = 25°C?
The continuous drain current at TC = 25°C is 20 A.
- What is the power dissipation at TA = 25°C?
The power dissipation at TA = 25°C is 3.0 W.
- Is the NVTFS5C680NLTAG MOSFET RoHS compliant?
Yes, the NVTFS5C680NLTAG MOSFET is Pb-free and RoHS compliant.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is -55 to +175°C.
- What is the typical input capacitance of this MOSFET?
The typical input capacitance is 327 pF.
- What are the key features of the NVTFS5C680NLTAG MOSFET?
Key features include a compact 8-WDFN package, low RDS(on), low capacitance, AEC-Q101 qualification, and Pb-free/RoHS compliance.
- In which applications is the NVTFS5C680NLTAG commonly used?
It is commonly used in automotive systems, industrial power management, consumer electronics, and renewable energy systems.
- What is the maximum gate-to-source voltage?
The maximum gate-to-source voltage is ±20 V.
