NVTFS5C471NLWFTAG
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onsemi NVTFS5C471NLWFTAG

Manufacturer No:
NVTFS5C471NLWFTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CHANNEL 40V 41A 8WDFN
Delivery:
Payment:
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Product Introduction

Overview

The NVTFS5C471NLWFTAG is a power MOSFET from onsemi, designed for high-performance applications. This single N-channel MOSFET features a compact footprint of 3.3 x 3.3 mm, making it ideal for space-constrained designs. It is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. The device is lead-free and RoHS compliant, aligning with environmental regulations.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS40V
Gate-to-Source VoltageVGS±20V
Continuous Drain Current (TC = 25°C)ID41A
Continuous Drain Current (TA = 25°C)ID12A
Power Dissipation (TC = 25°C)PD30W
Pulsed Drain Current (tp = 10 μs)IDM163A
Operating Junction and Storage Temperature RangeTJ, Tstg−55 to +175°C
Source Current (Body Diode)IS24A
Single Pulse Drain-to-Source Avalanche EnergyEAS66mJ
Lead Temperature for Soldering PurposesTL260°C
Junction-to-Case Thermal ResistanceRθJC5.2°C/W
Junction-to-Ambient Thermal ResistanceRθJA50°C/W
Drain-to-Source On Resistance (VGS = 10 V, ID = 10 A)RDS(on)7.4 - 9.0

Key Features

  • Small Footprint (3.3 x 3.3 mm) for Compact Design
  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Driver Losses
  • AEC-Q101 Qualified and PPAP Capable
  • Pb-Free and RoHS Compliant
  • Wettable Flanks Product (NVTFS5C471NLWF)

Applications

The NVTFS5C471NLWFTAG MOSFET is suitable for a variety of high-performance applications, including automotive systems, power supplies, DC-DC converters, and motor control circuits. Its compact size and low thermal resistance make it particularly useful in space-constrained designs where high current handling and low power losses are critical.

Q & A

  1. What is the maximum drain-to-source voltage of the NVTFS5C471NLWFTAG? The maximum drain-to-source voltage is 40 V.
  2. What is the continuous drain current at 25°C? The continuous drain current at 25°C is 41 A.
  3. Is the NVTFS5C471NLWFTAG AEC-Q101 qualified? Yes, it is AEC-Q101 qualified and PPAP capable.
  4. What is the junction-to-case thermal resistance? The junction-to-case thermal resistance is 5.2 °C/W.
  5. What is the maximum pulsed drain current? The maximum pulsed drain current is 163 A for a pulse duration of 10 μs.
  6. Is the device lead-free and RoHS compliant? Yes, the device is lead-free and RoHS compliant.
  7. What is the typical drain-to-source on resistance at VGS = 10 V and ID = 10 A? The typical drain-to-source on resistance is 7.4 - 9.0 mΩ.
  8. What are the operating junction and storage temperature ranges? The operating junction and storage temperature ranges are −55 to +175 °C.
  9. What is the single pulse drain-to-source avalanche energy? The single pulse drain-to-source avalanche energy is 66 mJ.
  10. What is the lead temperature for soldering purposes? The lead temperature for soldering purposes is 260 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:41A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:5.5 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Same Series
NVTFS5C471NLWFTAG
NVTFS5C471NLWFTAG
MOSFET N-CHANNEL 40V 41A 8WDFN

Similar Products

Part Number NVTFS5C471NLWFTAG NVTFS5C478NLWFTAG
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 41A (Tc) 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 10A, 10V 14mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.2V @ 20µA 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 4.5 V 3.8 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 25 V 400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 30W (Tc) 20W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

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