Overview
The NVTFS5C478NLWFTAG is a power MOSFET from onsemi, designed for high-performance applications. This N-Channel MOSFET features a small footprint of 3.3 x 3.3 mm, making it ideal for compact designs. It is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and other demanding environments. The device is Pb-free and RoHS compliant, aligning with modern environmental standards.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 26 | A |
| Power Dissipation (TC = 25°C) | PD | 20 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 104 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to +175 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 5 A) | RDS(on) | 11.5 - 14 | mΩ |
| Junction-to-Case Thermal Resistance | RJC | 8.2 | °C/W |
| Junction-to-Ambient Thermal Resistance | RJA | 51 | °C/W |
Key Features
- Small Footprint: Compact 3.3 x 3.3 mm design for space-efficient applications.
- Low RDS(on): Minimizes conduction losses with a low on-resistance of 11.5 - 14 mΩ at VGS = 10 V and ID = 5 A.
- Low Capacitance: Reduces driver losses with low input, output, and reverse transfer capacitances.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability in automotive and other demanding environments.
- Pb-Free and RoHS Compliant: Aligns with modern environmental standards.
- Wettable Flanks Product: Enhances solderability and inspection capabilities.
Applications
The NVTFS5C478NLWFTAG is suitable for a variety of high-performance applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power management and control systems.
- Power supplies: Its low RDS(on) and low capacitance make it suitable for high-efficiency power supply designs.
- Motor control: Used in motor drive applications requiring high current handling and low on-resistance.
- Industrial control: Suitable for industrial power management and control systems where reliability and efficiency are critical.
Q & A
- What is the maximum drain-to-source voltage of the NVTFS5C478NLWFTAG?
The maximum drain-to-source voltage (VDSS) is 40 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is 26 A.
- What is the typical on-resistance of the MOSFET at VGS = 10 V and ID = 5 A?
The typical on-resistance (RDS(on)) is between 11.5 - 14 mΩ.
- Is the NVTFS5C478NLWFTAG Pb-free and RoHS compliant?
- What is the junction-to-case thermal resistance?
The junction-to-case thermal resistance (RJC) is 8.2 °C/W.
- What are the operating junction and storage temperature ranges?
The operating junction and storage temperature ranges are −55 to +175 °C.
- What is the pulsed drain current rating for a pulse width of 10 μs?
The pulsed drain current (IDM) is 104 A for a pulse width of 10 μs.
- Is the NVTFS5C478NLWFTAG AEC-Q101 qualified?
- What is the typical gate threshold voltage?
The typical gate threshold voltage (VGS(TH)) is between 1.2 - 2.2 V.
- What are the package dimensions of the NVTFS5C478NLWFTAG?
The package dimensions are 3.3 x 3.3 mm with a 0.65P pitch.
