NVTFS015N04CTAG
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onsemi NVTFS015N04CTAG

Manufacturer No:
NVTFS015N04CTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 9.4A/27A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVTFS015N04CTAG is a high-performance N-Channel MOSFET produced by onsemi. This device is designed to offer excellent electrical characteristics, making it suitable for a variety of power management and switching applications. The MOSFET features a compact 8-pin WDFN package, which is lead-free and RoHS compliant. With its robust specifications and reliable performance, the NVTFS015N04CTAG is an ideal choice for designers seeking efficient and reliable power solutions.

Key Specifications

ParameterValue
Maximum Drain Current27 A
Maximum Drain-Source Voltage40 V
Minimum Operating Temperature-55°C
Maximum Operating Temperature+175°C
Gate Charge (Qg)6.3 nC
Power Dissipation (Pd)23 W
Package Type8-Pin WDFN

Key Features

  • High current capability of up to 27 A
  • Low on-resistance for efficient power handling
  • Wide operating temperature range from -55°C to +175°C
  • Compact and lead-free 8-pin WDFN package
  • RoHS compliant
  • High gate charge (Qg) of 6.3 nC for reliable switching

Applications

The NVTFS015N04CTAG MOSFET is versatile and can be used in various applications, including:

  • Power management systems
  • Switching power supplies
  • Motor control circuits
  • Automotive systems
  • Industrial power electronics

Q & A

  1. What is the maximum drain current of the NVTFS015N04CTAG MOSFET?
    The maximum drain current is 27 A.
  2. What is the maximum drain-source voltage of the NVTFS015N04CTAG?
    The maximum drain-source voltage is 40 V.
  3. What is the operating temperature range of the NVTFS015N04CTAG?
    The operating temperature range is from -55°C to +175°C.
  4. What is the package type of the NVTFS015N04CTAG?
    The package type is an 8-pin WDFN.
  5. Is the NVTFS015N04CTAG RoHS compliant?
    Yes, the NVTFS015N04CTAG is RoHS compliant.
  6. What is the gate charge (Qg) of the NVTFS015N04CTAG?
    The gate charge (Qg) is 6.3 nC.
  7. What is the power dissipation (Pd) of the NVTFS015N04CTAG?
    The power dissipation (Pd) is 23 W.
  8. In what types of applications can the NVTFS015N04CTAG be used?
    The NVTFS015N04CTAG can be used in power management systems, switching power supplies, motor control circuits, automotive systems, and industrial power electronics.
  9. Is the NVTFS015N04CTAG lead-free?
    Yes, the NVTFS015N04CTAG is lead-free.
  10. Where can I find detailed specifications for the NVTFS015N04CTAG?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser, RS Components, and Octopart.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:9.4A (Ta), 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:17.3mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:6.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:325 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.9W (Ta), 23W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number NVTFS015N04CTAG NVTFWS015N04CTAG NVTFS005N04CTAG
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 27A (Tc) 9.4A (Ta), 27A (Tc) 17A (Ta), 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 17.3mOhm @ 7.5A, 10V 17.3mOhm @ 7.5A, 10V 5.6mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 3.5V @ 20µA 3.5V @ 20µA 3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 6.3 nC @ 10 V 6.3 nC @ 10 V 16 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 25 V 325 pF @ 25 V 1000 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2.9W (Ta), 23W (Tc) 2.9W (Ta), 23W (Tc) 3.1W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

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