NVS4001NT1G
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onsemi NVS4001NT1G

Manufacturer No:
NVS4001NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 270MA SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVS4001NT1G is a single N-Channel, small signal MOSFET produced by onsemi. This device is packaged in a SC-70 (SOT-323) case, which is 30% smaller than the TSOP-6 package, making it ideal for space-constrained applications. The NVS4001NT1G is designed to offer low gate charge for fast switching, ESD protection, and is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards.

Key Specifications

Parameter Symbol Value Units
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 270 mA
Continuous Drain Current (TA = 85°C) ID 200 mA
Power Dissipation (TA = 25°C) PD 330 mW
Pulsed Drain Current IDM 800 mA
Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C
Source Current (Body Diode) IS 270 mA
Lead Temperature for Soldering Purposes TL 260 °C
Gate Threshold Voltage VGS(TH) 0.8 to 1.5 V
Drain-to-Source On Resistance (VGS = 4.0 V, ID = 10 mA) RDS(on) 1.0 to 1.5 Ω
Input Capacitance CISS 20 to 33 pF
Total Gate Charge QG(TOT) 0.9 to 1.3 nC

Key Features

  • Low Gate Charge for Fast Switching
  • Small Footprint - 30% smaller than TSOP-6
  • ESD Protected Gate
  • AEC-Q101 Qualified and PPAP Capable
  • Pb-Free and RoHS Compliant

Applications

  • Low Side Load Switch
  • Li-Ion Battery Supplied Devices - Cell Phones, PDAs, DSC
  • Buck Converters
  • Level Shifters

Q & A

  1. What is the maximum drain-to-source voltage of the NVS4001NT1G?

    The maximum drain-to-source voltage is 30 V.

  2. What is the continuous drain current at 25°C?

    The continuous drain current at 25°C is 270 mA.

  3. Is the NVS4001NT1G ESD protected?
  4. What are the operating junction and storage temperatures?

    The operating junction and storage temperatures range from -55°C to 150°C.

  5. Is the NVS4001NT1G AEC-Q101 qualified?
  6. What is the typical drain-to-source on resistance at VGS = 4.0 V?

    The typical drain-to-source on resistance at VGS = 4.0 V is 1.0 to 1.5 Ω.

  7. What is the input capacitance of the NVS4001NT1G?

    The input capacitance is 20 to 33 pF.

  8. What are some common applications of the NVS4001NT1G?
  9. Is the NVS4001NT1G Pb-Free and RoHS compliant?
  10. What is the lead temperature for soldering purposes?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id:1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:1.3 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:33 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):330mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-70-3 (SOT323)
Package / Case:SC-70, SOT-323
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In Stock

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