Overview
The NVMJS1D7N04CTWG is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed to offer superior efficiency and reliability in a variety of power management applications. With its compact footprint and advanced features, it is ideal for systems requiring high current handling and low power losses.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Id - Continuous Drain Current | 185 A (Tc), 35 A (Ta) |
| Power Dissipation | 3.8 W (Ta), 106 W (Tc) |
| Package Type | Surface Mount 8-LFPAK |
| Footprint | 5x6 mm |
Key Features
- Small Footprint (5x6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
Applications
The NVMJS1D7N04CTWG is suitable for a wide range of applications, including but not limited to:
- Power Supplies and DC-DC Converters
- Motor Control and Drives
- Automotive Systems
- Industrial Power Management
- Renewable Energy Systems
Q & A
- What is the drain-source breakdown voltage of the NVMJS1D7N04CTWG?
The drain-source breakdown voltage is 40 V. - What is the continuous drain current rating of the NVMJS1D7N04CTWG?
The continuous drain current is 185 A at Tc and 35 A at Ta. - What is the package type of the NVMJS1D7N04CTWG?
The package type is Surface Mount 8-LFPAK. - What are the key features of the NVMJS1D7N04CTWG?
The key features include a small footprint, low RDS(on), and low QG and capacitance. - What are some typical applications for the NVMJS1D7N04CTWG?
Typical applications include power supplies, motor control, automotive systems, industrial power management, and renewable energy systems. - What is the power dissipation rating of the NVMJS1D7N04CTWG?
The power dissipation is 3.8 W at Ta and 106 W at Tc. - Why is the NVMJS1D7N04CTWG preferred in high-current applications?
It is preferred due to its high current handling capability and low power losses. - How does the small footprint of the NVMJS1D7N04CTWG benefit design engineers?
The small footprint allows for more compact and efficient design. - What are the benefits of low RDS(on) in the NVMJS1D7N04CTWG?
Low RDS(on) minimizes conduction losses, improving overall efficiency. - How does low QG and capacitance benefit the NVMJS1D7N04CTWG in driver applications?
Low QG and capacitance minimize driver losses, enhancing system performance.
