Overview
The NVMFWS3D0P04M8LT1G is a power MOSFET from onsemi, designed for high-performance applications. This single P-channel MOSFET is part of the NVMFS3D0P04M8L series and is notable for its low on-resistance (RDS(on)) and high current capability. It is AEC-Q101 qualified, making it suitable for automotive and other demanding applications. The device is lead-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (RΠJC) | ID | -183 A (TC = 25°C), -129 A (TC = 100°C) | A |
| Power Dissipation (RΠJC) | PD | 171 W (TC = 25°C), 86 W (TC = 100°C) | W |
| Pulsed Drain Current | IDM | -900 A (tp = 10 μs) | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +175 | °C |
| Source Current (Body Diode) | IS | -143 A | A |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 752 mJ | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| On-Resistance | RDS(on) | 2.1 - 2.7 mΩ (VGS = -10 V, ID = -30 A) | mΩ |
| Gate Threshold Voltage | VGS(TH) | -1.0 to -2.4 V | V |
Key Features
- Low RDS(on) to minimize conduction losses
- High current capability
- Avalanche energy specified
- Wettable flanks product (NVMFWS3D0P04M8L)
- AEC-Q101 qualified and PPAP capable for automotive and other demanding applications
- Lead-free, halogen-free, and RoHS compliant
- High thermal performance with low junction-to-case thermal resistance (RΠJC = 0.9 °C/W)
Applications
- Automotive systems (e.g., power management, motor control)
- Industrial power supplies and DC-DC converters
- Power management in consumer electronics
- High-reliability applications requiring AEC-Q101 qualification
Q & A
- What is the maximum drain-to-source voltage of the NVMFWS3D0P04M8LT1G MOSFET?
The maximum drain-to-source voltage (VDSS) is -40 V.
- What is the continuous drain current rating at 25°C and 100°C?
The continuous drain current is -183 A at 25°C and -129 A at 100°C.
- What is the on-resistance (RDS(on)) of this MOSFET?
The on-resistance (RDS(on)) is 2.1 - 2.7 mΩ at VGS = -10 V and ID = -30 A.
- Is the NVMFWS3D0P04M8LT1G MOSFET RoHS compliant?
- What is the operating junction temperature range of this MOSFET?
The operating junction temperature range is -55°C to +175°C.
- What are the typical applications of the NVMFWS3D0P04M8LT1G MOSFET?
Typical applications include automotive systems, industrial power supplies, DC-DC converters, and other high-reliability applications.
- What is the single pulse drain-to-source avalanche energy of this MOSFET?
The single pulse drain-to-source avalanche energy (EAS) is 752 mJ.
- Is the NVMFWS3D0P04M8LT1G AEC-Q101 qualified?
- What is the gate threshold voltage (VGS(TH)) of this MOSFET?
The gate threshold voltage (VGS(TH)) is -1.0 to -2.4 V.
- What is the thermal resistance (RΠJC) of the NVMFWS3D0P04M8LT1G MOSFET?
The thermal resistance (RΠJC) is 0.9 °C/W.
