NVMFS5C646NLAFT1G
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onsemi NVMFS5C646NLAFT1G

Manufacturer No:
NVMFS5C646NLAFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 20A/93A 5DFN
Delivery:
Payment:
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Product Introduction

Overview

The NVMFS5C646NLAFT1G is a high-performance, single N-Channel power MOSFET manufactured by onsemi. This device is designed to offer excellent electrical characteristics, making it suitable for a wide range of applications that require high power handling and efficiency. With its robust construction and advanced MOSFET technology, the NVMFS5C646NLAFT1G is ideal for use in power management, automotive, and industrial systems.

Key Specifications

ParameterValue
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Continuous Drain Current (Id)93 A
On-Resistance (Rds(on))4.7 mohm
Minimum Operating Temperature-55°C
Maximum Operating Temperature+175°C
Power Dissipation (Pd)79 W
Channel ModeEnhancement

Key Features

  • High current capability of up to 93 A
  • Low on-resistance of 4.7 mohm, enhancing efficiency and reducing power losses
  • Wide operating temperature range from -55°C to +175°C, making it suitable for harsh environments
  • Enhancement mode operation for better control and reliability
  • Robust construction to handle high power dissipation of up to 79 W

Applications

The NVMFS5C646NLAFT1G is versatile and can be used in various applications, including:

  • Power management systems
  • Automotive systems (e.g., battery management, motor control)
  • Industrial power supplies and motor drives
  • High-power switching and DC-DC converters

Q & A

  1. What is the maximum drain to source voltage of the NVMFS5C646NLAFT1G?
    The maximum drain to source voltage (Vdss) is 60V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (Id) is 93 A.
  3. What is the on-resistance (Rds(on)) of the NVMFS5C646NLAFT1G?
    The on-resistance (Rds(on)) is 4.7 mohm.
  4. What is the operating temperature range of this device?
    The operating temperature range is from -55°C to +175°C.
  5. What is the power dissipation capability of the NVMFS5C646NLAFT1G?
    The power dissipation (Pd) is up to 79 W.
  6. What type of channel mode does this MOSFET operate in?
    This MOSFET operates in enhancement mode.
  7. Is the NVMFS5C646NLAFT1G suitable for automotive applications?
    Yes, it is suitable for automotive applications due to its robust construction and wide operating temperature range.
  8. Can the NVMFS5C646NLAFT1G be used in high-power switching applications?
    Yes, it is designed for high-power switching and DC-DC converter applications.
  9. Where can I find detailed specifications for the NVMFS5C646NLAFT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
  10. What is the typical application environment for this MOSFET?
    This MOSFET is typically used in power management, automotive, and industrial systems where high power handling and efficiency are required.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta), 93A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2164 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.7W (Ta), 79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NVMFS5C646NLAFT1G NVMFS5C646NLAFT3G NVMFS5C646NLWFT1G NVMFS5C645NLAFT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Not For New Designs Discontinued at Digi-Key Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 93A (Tc) 20A (Ta), 93A (Tc) 20A (Ta), 93A (Tc) 22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 50A, 10V 4.7mOhm @ 50A, 10V 4.7mOhm @ 50A, 10V 4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.7 nC @ 10 V 33.7 nC @ 10 V 33.7 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2164 pF @ 25 V 2164 pF @ 25 V 2164 pF @ 25 V 2200 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 3.7W (Ta), 79W (Tc) 3.7W (Ta), 79W (Tc) 3.7W (Ta), 79W (Tc) 3.7W (Ta), 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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