Overview
The NVMFS5C645NLAFT1G is a high-performance N-Channel MOSFET manufactured by onsemi. This device is designed for applications requiring high current handling and low on-resistance. It features a compact 5x6 mm DFN5 package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 100 | A |
| Continuous Drain Current (TA = 25°C) | ID | 22 | A |
| Drain-to-Source On Resistance | RDS(on) | 3.3 - 5.7 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.0 | V |
| Total Gate Charge | QG(TOT) | 16 - 34 | nC |
| Power Dissipation (TC = 25°C) | P | 79 | W |
| Power Dissipation (TA = 25°C) | P | 3.7 | W |
Key Features
- Small Footprint: Compact 5x6 mm DFN5 package for space-efficient designs.
- Low RDS(on): Minimizes conduction losses with on-resistance values ranging from 3.3 to 5.7 mΩ.
- Low QG and Capacitance: Reduces driver losses due to low gate charge and capacitance.
- Wettable Flank Option: Available with wettable flanks for enhanced optical inspection (NVMFS5C645NLWF).
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
- Pb-Free and RoHS Compliant: Aligns with environmental regulations.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Power Management: Ideal for power management in high-current applications such as DC-DC converters, motor control, and power supplies.
- Industrial Control: Used in industrial control systems, including motor drives and power inverters.
- Consumer Electronics: Applicable in high-power consumer electronics requiring efficient power management.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C645NLAFT1G MOSFET?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current at TC = 25°C?
The continuous drain current at TC = 25°C is 100 A.
- What is the typical on-resistance of the NVMFS5C645NLAFT1G?
The typical on-resistance (RDS(on)) ranges from 3.3 to 5.7 mΩ.
- Is the NVMFS5C645NLAFT1G Pb-free and RoHS compliant?
- What is the gate threshold voltage range of the NVMFS5C645NLAFT1G?
The gate threshold voltage (VGS(TH)) ranges from 1.2 to 2.0 V.
- What are the package options available for the NVMFS5C645NLAFT1G?
The device is available in DFN5 and DFNW5 packages, with the latter offering wettable flanks for enhanced optical inspection.
- What is the maximum power dissipation at TC = 25°C?
The maximum power dissipation at TC = 25°C is 79 W.
- Is the NVMFS5C645NLAFT1G suitable for automotive applications?
- What are the typical applications of the NVMFS5C645NLAFT1G MOSFET?
It is used in automotive systems, power management, industrial control, and high-power consumer electronics.
- Where can I find detailed ordering and shipping information for the NVMFS5C645NLAFT1G?
Detailed ordering and shipping information can be found in the package dimensions section of the datasheet.
