NVMFS5C426NAFT1G
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onsemi NVMFS5C426NAFT1G

Manufacturer No:
NVMFS5C426NAFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 41A/235A 5DFN
Delivery:
Payment:
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Product Introduction

Overview

The NVMFS5C426NAFT1G is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed for applications requiring high current handling and low on-resistance. It features a compact DFN5 package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free and RoHS compliant, aligning with environmental regulations.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 40 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TC = 25°C) ID 235 A
Continuous Drain Current (TA = 25°C) ID 41 A
Power Dissipation (TC = 25°C) PD 128 W
Power Dissipation (TA = 25°C) PD 3.8 W
Drain-to-Source On Resistance RDS(on) 1.3 mΩ @ 10 V
Operating Junction Temperature TJ -55 to +175 °C
Lead Temperature for Soldering TL 260 °C

Key Features

  • Compact Design: Small footprint in a 5x6 mm DFN5 package, ideal for space-constrained applications.
  • Low On-Resistance: Minimizes conduction losses with an RDS(on) of 1.3 mΩ at VGS = 10 V.
  • Low QG and Capacitance: Reduces driver losses with low total gate charge (QG(TOT)) and capacitance.
  • Wettable Flank Option: Available in DFNW5 package with wettable flanks for enhanced optical inspection.
  • AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
  • Pb-Free and RoHS Compliant: Aligns with environmental regulations.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and high reliability.
  • Power Management: Ideal for power management in high-current applications such as DC-DC converters and power supplies.
  • Industrial Control: Used in industrial control systems, motor drives, and other high-power switching applications.
  • Consumer Electronics: Applicable in consumer electronics requiring high current handling and low on-resistance.

Q & A

  1. What is the maximum drain-to-source voltage of the NVMFS5C426NAFT1G?

    The maximum drain-to-source voltage is 40 V.

  2. What is the continuous drain current at TC = 25°C?

    The continuous drain current at TC = 25°C is 235 A.

  3. What is the on-resistance of the MOSFET at VGS = 10 V?

    The on-resistance is 1.3 mΩ at VGS = 10 V.

  4. Is the NVMFS5C426NAFT1G Pb-free and RoHS compliant?

    Yes, it is Pb-free and RoHS compliant.

  5. What is the operating junction temperature range of the MOSFET?

    The operating junction temperature range is -55 to +175°C.

  6. What package options are available for the NVMFS5C426NAFT1G?

    It is available in DFN5 and DFNW5 packages, with the latter offering wettable flanks for enhanced optical inspection.

  7. Is the NVMFS5C426NAFT1G AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified and PPAP capable.

  8. What is the maximum power dissipation at TA = 25°C?

    The maximum power dissipation at TA = 25°C is 3.8 W.

  9. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260°C.

  10. What are some typical applications of the NVMFS5C426NAFT1G?

    Typical applications include automotive systems, power management, industrial control, and consumer electronics requiring high current handling.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:41A (Ta), 235A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 128W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NVMFS5C426NAFT1G NVMFS5C426NAFT3G NVMFS5C426NWFT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Not For New Designs Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 41A (Ta), 235A (Tc) 41A (Ta), 235A (Tc) 235A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 50A, 10V 1.3mOhm @ 50A, 10V 1.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 3.5V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V 65 nC @ 10 V 65 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 25 V 4300 pF @ 25 V 4300 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.8W (Ta), 128W (Tc) 3.8W (Ta), 128W (Tc) 3.8W (Ta), 128W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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