Overview
The NVHL082N65S3F is a high-voltage, N-Channel MOSFET from ON Semiconductor, part of their SUPERFET III family. This device utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates, making it highly suitable for various power systems requiring miniaturization and higher efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | 650 | V |
| Gate to Source Voltage (VGSS) | ±30 | V |
| Continuous Drain Current (ID) | 40 A (TC = 25°C), 25.5 A (TC = 100°C) | A |
| Pulsed Drain Current (IDM) | 100 A | A |
| On-Resistance (RDS(on)) | 82 mΩ @ 10 V | mΩ |
| Total Gate Charge (Qg) | 81 nC | nC |
| Effective Output Capacitance (Coss(eff.)) | 722 pF | pF |
| Maximum Junction Temperature (TJ) | 150°C | °C |
| Thermal Resistance, Junction to Case (RθJC) | 0.4°C/W | °C/W |
| Package | TO-247 |
Key Features
- 700 V @ TJ = 150°C rating for high voltage applications
- Ultra Low Gate Charge (Typ. Qg = 81 nC) for efficient switching
- Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF) to reduce switching losses
- 100% Avalanche Tested for reliability
- AEC-Q101 Qualified and PPAP Capable for automotive applications
- Optimized reverse recovery performance of body diode to improve system reliability
Applications
- Automotive On Board Charger for Hybrid Electric Vehicles (HEV) and Electric Vehicles (EV)
- Automotive DC/DC converters for HEV and EV
Q & A
- What is the maximum drain to source voltage of the NVHL082N65S3F MOSFET?
The maximum drain to source voltage (VDSS) is 650 V.
- What is the continuous drain current rating at 25°C and 100°C?
The continuous drain current (ID) is 40 A at 25°C and 25.5 A at 100°C.
- What is the typical on-resistance of the NVHL082N65S3F?
The typical on-resistance (RDS(on)) is 82 mΩ at 10 V.
- What is the total gate charge of the NVHL082N65S3F?
The total gate charge (Qg) is 81 nC.
- Is the NVHL082N65S3F qualified for automotive applications?
Yes, it is AEC-Q101 Qualified and PPAP Capable.
- What is the maximum junction temperature of the NVHL082N65S3F?
The maximum junction temperature (TJ) is 150°C.
- What package type is the NVHL082N65S3F available in?
The NVHL082N65S3F is available in the TO-247 package.
- What are some typical applications of the NVHL082N65S3F?
Typical applications include automotive on-board chargers and DC/DC converters for HEV and EV.
- What is the thermal resistance from junction to case (RθJC) of the NVHL082N65S3F?
The thermal resistance from junction to case (RθJC) is 0.4°C/W.
- Does the NVHL082N65S3F have optimized reverse recovery performance of the body diode?
Yes, it has optimized reverse recovery performance of the body diode to improve system reliability.
