Overview
The onsemi NVD6416ANLT4G-001-VF01 is a high-performance N-Channel power MOSFET designed for various applications requiring high current capability and low on-resistance. This device is part of onsemi's portfolio of automotive and industrial-grade MOSFETs, ensuring reliability and compliance with stringent industry standards. The NVD6416ANLT4G-001-VF01 is packaged in a DPAK-3 format, which is lead-free and RoHS compliant, making it suitable for a wide range of electronic systems.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 100 | V |
| Gate-to-Source Voltage - Continuous | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 19 | A |
| Power Dissipation (TC = 25°C) | PD | 71 | W |
| Drain-to-Source On-Resistance (VGS = 10V, ID = 19A) | RDS(on) | 74 mΩ | mΩ |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to +175 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 50 mJ | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
Key Features
- Low RDS(on): The MOSFET features a low on-resistance of 74 mΩ at VGS = 10V and ID = 19A, enhancing efficiency in power applications.
- High Current Capability: It can handle a continuous drain current of 19A at TC = 25°C, making it suitable for high-power applications.
- 100% Avalanche Tested: Ensures robustness and reliability under extreme conditions.
- AEC-Q101 Qualified and PPAP Capable: Meets automotive industry standards, making it ideal for automotive and other demanding applications.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with global regulations.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Industrial Power Systems: Used in industrial power supplies, motor control, and other high-power applications.
- Power Management: Ideal for power management in electronic devices requiring high efficiency and reliability.
- Renewable Energy Systems: Can be used in solar and wind power systems for efficient power conversion.
Q & A
- What is the maximum drain-to-source voltage of the NVD6416ANLT4G-001-VF01?
The maximum drain-to-source voltage (VDSS) is 100V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) is 19A at TC = 25°C.
- What is the on-resistance of the MOSFET at VGS = 10V and ID = 19A?
The on-resistance (RDS(on)) is 74 mΩ at VGS = 10V and ID = 19A.
- Is the NVD6416ANLT4G-001-VF01 RoHS compliant?
- What is the operating temperature range of the MOSFET?
- What package type is used for the NVD6416ANLT4G-001-VF01?
- Is the NVD6416ANLT4G-001-VF01 suitable for automotive applications?
- What is the maximum power dissipation of the MOSFET at 25°C?
- What is the single pulse drain-to-source avalanche energy rating?
- What is the lead temperature for soldering purposes?
