Overview
The NVD2955T4G is a P-Channel Power MOSFET produced by onsemi, designed for high-performance and reliability in various power management applications. This device is part of the NTD2955/NVD2955 series, which is known for its robustness in withstanding high energy in avalanche and commutation modes. The NVD2955T4G is particularly suited for low-voltage, high-speed switching applications, making it an ideal choice for power supplies, converters, and power motor controls.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -60 | Vdc |
| Gate-to-Source Voltage - Continuous | VGS | ±20 | Vdc |
| Gate-to-Source Voltage - Non-repetitive (tp ≤ 10 ms) | VGSM | ±25 | Vpk |
| Drain Current - Continuous @ Ta = 25°C | ID | -12 | A |
| Drain Current - Single Pulse (tp ≤ 10 ms) | IDM | -18 | A |
| Total Power Dissipation @ Ta = 25°C | PD | 55 | W |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to 175 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 216 | mJ |
| Thermal Resistance - Junction-to-Case | RθJC | 2.73 | °C/W |
| Thermal Resistance - Junction-to-Ambient | RθJA | 71.4 | °C/W |
| Maximum Lead Temperature for Soldering | TL | 260 | °C |
| Gate Threshold Voltage | VGS(th) | -2.0 to -4.0 | Vdc |
| Static Drain-to-Source On-State Resistance | RDS(on) | 0.155 to 0.180 | Ω |
| Drain-to-Source On-Voltage | VDS(on) | -1.86 to -2.6 | Vdc |
Key Features
- Avalanche Energy Specified: The NVD2955T4G is designed to withstand high energy in avalanche and commutation modes, ensuring robust performance under demanding conditions.
- IDSS and VDS(on) Specified at Elevated Temperature: This feature enhances the device's reliability and performance across a wide temperature range.
- Designed for Low-Voltage, High-Speed Switching Applications: Ideal for power supplies, converters, and power motor controls where fast switching is critical.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free and RoHS Compliant: Environmentally friendly packaging.
Applications
- Power Supplies: The NVD2955T4G is well-suited for use in power supply units due to its high-speed switching capabilities and robust avalanche energy handling.
- Converters: Its performance in low-voltage, high-speed switching makes it an excellent choice for DC-DC converters and other power conversion applications.
- Power Motor Controls: Used in motor control circuits where high reliability and fast switching are essential.
- Bridge Circuits: Particularly useful in bridge configurations where diode speed and commutating safe operating areas are critical.
Q & A
- What is the maximum drain-to-source voltage of the NVD2955T4G?
The maximum drain-to-source voltage (VDSS) is -60 Vdc.
- What is the continuous gate-to-source voltage rating?
The continuous gate-to-source voltage (VGS) is ±20 Vdc.
- What is the maximum continuous drain current at 25°C?
The maximum continuous drain current (ID) at 25°C is -12 A.
- What is the total power dissipation at 25°C?
The total power dissipation (PD) at 25°C is 55 W.
- What is the operating and storage temperature range?
The operating and storage temperature range is -55 to 175°C.
- What is the single pulse drain-to-source avalanche energy?
The single pulse drain-to-source avalanche energy (EAS) is 216 mJ.
- Is the NVD2955T4G AEC-Q101 qualified?
Yes, the NVD2955T4G is AEC-Q101 qualified and PPAP capable.
- What are the typical applications of the NVD2955T4G?
Typical applications include power supplies, converters, power motor controls, and bridge circuits.
- Is the NVD2955T4G Pb-Free and RoHS compliant?
Yes, the NVD2955T4G is Pb-Free and RoHS compliant.
- What is the maximum lead temperature for soldering?
The maximum lead temperature for soldering is 260°C.
