NVBLS1D1N08H
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onsemi NVBLS1D1N08H

Manufacturer No:
NVBLS1D1N08H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 41A/351A 8HPSOF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVBLS1D1N08H is a high-performance power MOSFET from ON Semiconductor, designed for a wide range of applications requiring high power handling and efficiency. This single N-channel MOSFET features a voltage rating of 80 V and a low on-resistance of 1.05 mΩ, making it suitable for high-current applications. With a maximum drain current of 351 A, it is ideal for use in power management systems, motor control, and other high-power electronic devices.

Key Specifications

ParameterSymbolValueUnit
Voltage Rating (Vds)Vds80V
On-Resistance (Rds(on))Rds(on)1.05
Maximum Drain Current (Id)Id351A
Junction-to-Case Thermal Resistance (RθJC)RθJC0.48°C/W
Junction-to-Ambient Thermal Resistance (RθJA)RθJA-°C/W

Key Features

  • High voltage rating of 80 V for robust performance in high-voltage applications.
  • Low on-resistance of 1.05 mΩ, reducing power losses and improving efficiency.
  • High maximum drain current of 351 A, suitable for high-current applications.
  • Low junction-to-case thermal resistance of 0.48 °C/W, enhancing thermal management.
  • Single N-channel configuration for simplicity and reliability in circuit design.

Applications

  • Power management systems: Ideal for use in DC-DC converters, power supplies, and other power management circuits.
  • Motor control: Suitable for motor drive applications due to its high current handling and low on-resistance.
  • High-power electronic devices: Used in various high-power electronic systems requiring efficient power handling.
  • Automotive systems: Can be used in automotive applications such as battery management and motor control.

Q & A

  1. What is the voltage rating of the NVBLS1D1N08H MOSFET?
    The voltage rating of the NVBLS1D1N08H MOSFET is 80 V.
  2. What is the on-resistance of the NVBLS1D1N08H MOSFET?
    The on-resistance (Rds(on)) of the NVBLS1D1N08H MOSFET is 1.05 mΩ.
  3. What is the maximum drain current of the NVBLS1D1N08H MOSFET?
    The maximum drain current (Id) of the NVBLS1D1N08H MOSFET is 351 A.
  4. What is the junction-to-case thermal resistance of the NVBLS1D1N08H MOSFET?
    The junction-to-case thermal resistance (RθJC) of the NVBLS1D1N08H MOSFET is 0.48 °C/W.
  5. In what types of applications is the NVBLS1D1N08H MOSFET typically used?
    The NVBLS1D1N08H MOSFET is typically used in power management systems, motor control, high-power electronic devices, and automotive systems.
  6. Who is the manufacturer of the NVBLS1D1N08H MOSFET?
    The NVBLS1D1N08H MOSFET is manufactured by ON Semiconductor.
  7. What is the configuration of the NVBLS1D1N08H MOSFET?
    The NVBLS1D1N08H MOSFET is a single N-channel MOSFET.
  8. How does the low on-resistance benefit the performance of the NVBLS1D1N08H MOSFET?
    The low on-resistance reduces power losses and improves the overall efficiency of the MOSFET.
  9. What are the thermal management benefits of the NVBLS1D1N08H MOSFET?
    The low junction-to-case thermal resistance enhances thermal management, allowing for better heat dissipation.
  10. Can the NVBLS1D1N08H MOSFET be used in automotive applications?
    Yes, the NVBLS1D1N08H MOSFET can be used in automotive applications such as battery management and motor control.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:41A (Ta), 351A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.05mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 650µA
Gate Charge (Qg) (Max) @ Vgs:166 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11200 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):4.2W (Ta), 311W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HPSOF
Package / Case:8-PowerSFN
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