NTP5D0N15MC
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onsemi NTP5D0N15MC

Manufacturer No:
NTP5D0N15MC
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 150V 15A/139A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTP5D0N15MC is an N-Channel Shielded Gate PowerTrench MOSFET manufactured by onsemi. This device is designed for high-performance applications requiring low on-state resistance and high current handling. The MOSFET features advanced PowerTrench technology, which enhances its switching characteristics and reduces electromagnetic interference (EMI).

Key Specifications

ParameterValue
VDS (Max)150 V
RDS(on) Max @ VGS = 10 V5.0 mΩ
VGS Max±20 V
VGS(th) Max4.5 V
ID Max139 A
PD Max2.4 W
Qg Typ @ VGS = 10 V75 nC
Qrr Typ189 nC
Ciss Typ6300 pF
Coss Typ1900 pF
Crss Typ13 pF

Key Features

  • Shielded Gate MOSFET Technology: Enhances switching performance and reduces EMI.
  • Low On-State Resistance: RDS(on) = 5.0 mΩ at VGS = 10 V, ID = 97 A.
  • Reduced Switching Noise/EMI: 50% lower Qrr compared to other MOSFET suppliers.
  • 100% UIL Tested: Ensures reliability and quality.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.

Applications

  • Synchronous Rectification for ATX / Server / Telecom PSU
  • Motor Drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • Battery Energy Storage Systems (BESS): Suitable for both residential and commercial BESS due to its high current handling and low on-state resistance.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NTP5D0N15MC MOSFET?
    The maximum drain-source voltage (VDS) is 150 V.
  2. What is the on-state resistance (RDS(on)) at VGS = 10 V?
    The on-state resistance (RDS(on)) is 5.0 mΩ at VGS = 10 V.
  3. What is the maximum gate-source voltage (VGS)?
    The maximum gate-source voltage (VGS) is ±20 V.
  4. What is the maximum drain current (ID)?
    The maximum drain current (ID) is 139 A.
  5. Is the NTP5D0N15MC MOSFET RoHS compliant?
    Yes, the NTP5D0N15MC MOSFET is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
  6. What are some typical applications of the NTP5D0N15MC MOSFET?
    Typical applications include synchronous rectification for ATX / Server / Telecom PSU, motor drives, uninterruptible power supplies, and micro solar inverters.
  7. How does the Shielded Gate MOSFET Technology benefit the device?
    The Shielded Gate MOSFET Technology enhances switching performance and reduces electromagnetic interference (EMI).
  8. What is the significance of the lower Qrr in this MOSFET?
    The lower Qrr reduces switching noise and EMI, improving overall system efficiency.
  9. Is the NTP5D0N15MC suitable for battery energy storage systems (BESS)?
    Yes, it is suitable for both residential and commercial BESS due to its high current handling and low on-state resistance.
  10. What is the package type of the NTP5D0N15MC MOSFET?
    The package type is TO-220-3.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:15A (Ta), 139A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5mOhm @ 97A, 10V
Vgs(th) (Max) @ Id:4.5V @ 532µA
Gate Charge (Qg) (Max) @ Vgs:75 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6300 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):2.4W (Ta), 214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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