NTNS3164NZT5G
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onsemi NTNS3164NZT5G

Manufacturer No:
NTNS3164NZT5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 361MA SOT883
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTNS3164NZT5G is a single, N-Channel, small signal MOSFET produced by onsemi. This device is packaged in the ultra-low profile SOT-883 (XDFN3) package, measuring 1.0 x 0.6 x 0.4 mm, making it ideal for extremely thin environments such as portable electronics. The MOSFET is designed to be Pb-Free, Halogen Free/BFR Free, and is RoHS compliant.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS20V
Gate-to-Source VoltageVGS±8V
Continuous Drain Current (TA = 25°C)ID361mA
Power Dissipation (TA = 25°C)PD155mW
Pulsed Drain Current (tp = 10 μs)IDM1082mA
Operating Junction and Storage TemperatureTJ, TSTG−55 to 150°C
Source Current (Body Diode)IS129mA
Lead Temperature for Soldering PurposesTL260°C
Gate Threshold VoltageVGS(TH)0.4 to 1.0V
Drain-to-Source On Resistance (VGS = 4.5 V, ID = 200 mA)RDS(on)0.5 to 0.7Ω

Key Features

  • Ultra-low profile SOT-883 (XDFN3) package for extremely thin environments.
  • Low RDS(on) solution in an ultra-small package.
  • 1.5 V gate drive capability.
  • Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
  • Optimized for power management in ultra-portable solutions.

Applications

  • High side switch.
  • High speed interfacing.
  • Level shift and translate.
  • Power management in ultra-portable solutions.

Q & A

  1. What is the package type of the NTNS3164NZT5G MOSFET? The NTNS3164NZT5G is packaged in the SOT-883 (XDFN3) package.
  2. What is the maximum drain-to-source voltage of the NTNS3164NZT5G? The maximum drain-to-source voltage is 20 V.
  3. What is the continuous drain current at 25°C? The continuous drain current at 25°C is 361 mA.
  4. Is the NTNS3164NZT5G RoHS compliant? Yes, the NTNS3164NZT5G is RoHS compliant.
  5. What are the typical applications of the NTNS3164NZT5G? Typical applications include high side switching, high speed interfacing, level shifting, and power management in ultra-portable solutions.
  6. What is the gate threshold voltage range of the NTNS3164NZT5G? The gate threshold voltage range is from 0.4 to 1.0 V.
  7. What is the maximum power dissipation at 25°C? The maximum power dissipation at 25°C is 155 mW.
  8. What is the lead temperature for soldering purposes? The lead temperature for soldering purposes is 260°C.
  9. What are the dimensions of the SOT-883 (XDFN3) package? The package dimensions are 1.0 x 0.6 x 0.4 mm.
  10. Is the NTNS3164NZT5G Pb-Free and Halogen Free/BFR Free? Yes, the NTNS3164NZT5G is Pb-Free and Halogen Free/BFR Free.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:361mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:700mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:24 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):155mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-883 (XDFN3) (1x0.6)
Package / Case:3-XFDFN
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Similar Products

Part Number NTNS3164NZT5G NTNS3166NZT5G
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 361mA (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V -
Rds On (Max) @ Id, Vgs 700mOhm @ 200mA, 4.5V -
Vgs(th) (Max) @ Id 1V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 0.8 nC @ 4.5 V -
Vgs (Max) ±8V -
Input Capacitance (Ciss) (Max) @ Vds 24 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 155mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-883 (XDFN3) (1x0.6) SOT-883 (XDFN3) (1x0.6)
Package / Case 3-XFDFN 3-XFDFN

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